Datasheets
70V659S10DRG by:

Multi-Port SRAM, 128KX36, 10ns, CMOS, PQFP208

Part Details for 70V659S10DRG by Renesas Electronics Corporation

Overview of 70V659S10DRG by Renesas Electronics Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Electronic Manufacturing Entertainment and Gaming

Price & Stock for 70V659S10DRG

Part # Distributor Description Stock Price Buy
DISTI # 70V659S10DRG-ND
DigiKey IC SRAM 4.5MBIT PARALLEL 208PQFP Min Qty: 24 Lead time: 18 Weeks Container: Tray Temporarily Out of Stock
  • 24 $223.3592
$223.3592 Buy Now
DISTI # 70V659S10DRG
Avnet Americas SMP - Trays (Alt: 70V659S10DRG) RoHS: Compliant Min Qty: 24 Package Multiple: 6 Lead time: 18 Weeks, 0 Days Container: Tray 0
  • 1 $178.9667
$178.9667 Buy Now
DISTI # 972-70V659S10DRG
Mouser Electronics SRAM 128K x 36 3.3V Dual-Port RAM RoHS: Compliant 0
  • 24 $221.7000
  • 30 $216.8400
$216.8400 / $221.7000 Order Now
Future Electronics SRAM - Dual Port, Asynchronous Memory IC 4.5Mb (128K x 36) Parallel 10ns 208-PQF RoHS: Compliant pbFree: Yes Min Qty: 12 Package Multiple: 6 Lead time: 18 Weeks Container: Tray 0
Tray
  • 6 $217.3600
$217.3600 Buy Now

Part Details for 70V659S10DRG

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70V659S10DRG Part Data Attributes

70V659S10DRG Renesas Electronics Corporation
Buy Now Datasheet
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70V659S10DRG Renesas Electronics Corporation Multi-Port SRAM, 128KX36, 10ns, CMOS, PQFP208
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Reach Compliance Code compliant
Factory Lead Time 18 Weeks
Samacsys Manufacturer Renesas Electronics
Access Time-Max 10 ns
I/O Type COMMON
JESD-30 Code S-PQFP-G208
JESD-609 Code e3
Length 28 mm
Memory Density 4718592 bit
Memory IC Type MULTI-PORT SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 2
Number of Terminals 208
Number of Words 131072 words
Number of Words Code 128000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128KX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FQFP
Package Equivalence Code QFP208,1.2SQ,20
Package Shape SQUARE
Package Style FLATPACK, FINE PITCH
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 4.1 mm
Standby Current-Max 0.015 A
Standby Voltage-Min 3.15 V
Supply Current-Max 0.5 mA
Supply Voltage-Max (Vsup) 3.45 V
Supply Voltage-Min (Vsup) 3.15 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position QUAD
Width 28 mm

Alternate Parts for 70V659S10DRG

This table gives cross-reference parts and alternative options found for 70V659S10DRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 70V659S10DRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
70V659S10BFG 128K x 36 3.3V Dual-Port RAM, Interleaved I/O''s, CABGA126/Tray Renesas Electronics Corporation 70V659S10DRG vs 70V659S10BFG

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