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3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA250/Tray
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71V416L10BEG-ND
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DigiKey | IC SRAM 4MBIT PARALLEL 48CABGA Min Qty: 1 Lead time: 18 Weeks Container: Tray |
8500 In Stock |
|
$7.0014 / $9.7100 | Buy Now |
DISTI #
71V416L10BEG
|
Avnet Americas | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - Trays (Alt: 71V416L10BEG) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 26 Weeks, 1 Days Container: Tray | 0 |
|
$6.3881 / $7.2935 | Buy Now |
DISTI #
972-71V416L10BEG
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Mouser Electronics | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM RoHS: Compliant | 249 |
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$6.9300 / $9.6300 | Buy Now |
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Future Electronics | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10 ns 48-CABGA (9x9) RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 250 Container: Tray | 0Tray |
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$6.2900 | Buy Now |
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Renesas Electronics America | IC SRAM 4MBIT PARALLEL 48CABGA Min Qty: 1 Container: Tray | 8500 |
|
$7.0014 / $9.7100 | Buy Now |
DISTI #
71V416L10BEG
|
Avnet Americas | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - Trays (Alt: 71V416L10BEG) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 26 Weeks, 1 Days Container: Tray | 0 |
|
$6.3881 / $7.2935 | Buy Now |
DISTI #
71V416L10BEG
|
Avnet Silica | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout (Alt: 71V416L10BEG) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 2 Weeks, 5 Days | Silica - 0 |
|
Buy Now |
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71V416L10BEG
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
71V416L10BEG
Renesas Electronics Corporation
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA250/Tray
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | CABGA | |
Pin Count | 48 | |
Manufacturer Package Code | BEG48 | |
Reach Compliance Code | compliant | |
ECCN Code | NLR | |
HTS Code | 8542320041 | |
Factory Lead Time | 36 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Access Time-Max | 10 ns | |
I/O Type | COMMON | |
JESD-30 Code | S-PBGA-B48 | |
JESD-609 Code | e1 | |
Memory Density | 4194304 bit | |
Memory IC Type | STANDARD SRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 48 | |
Number of Words | 262144 words | |
Number of Words Code | 256000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256KX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA48,6X8,30 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Standby Current-Max | 0.01 A | |
Standby Voltage-Min | 3 V | |
Supply Current-Max | 0.2 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.75 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 40 |
This table gives cross-reference parts and alternative options found for 71V416L10BEG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 71V416L10BEG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IDT71V416YL10BE | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs IDT71V416YL10BE |
IDT71V416L10BE | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs IDT71V416L10BE |
71V416L10BE | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA250/Tray | Renesas Electronics Corporation | 71V416L10BEG vs 71V416L10BE |
71V416L10BEG8 | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA0/Reel | Renesas Electronics Corporation | 71V416L10BEG vs 71V416L10BEG8 |
IDT71V416L10BEG | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs IDT71V416L10BEG |
71V416VL10BEG | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs 71V416VL10BEG |
71V416YL10BE | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs 71V416YL10BE |
IDT71V416VL10BEG | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs IDT71V416VL10BEG |
71V416L10BE8 | CABGA-48, Reel | Integrated Device Technology Inc | 71V416L10BEG vs 71V416L10BE8 |
IDT71V416YFL10BE | Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L10BEG vs IDT71V416YFL10BE |