Datasheets
933929990112 by: NXP Semiconductors

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power

Part Details for 933929990112 by NXP Semiconductors

Overview of 933929990112 by NXP Semiconductors

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Electronic Manufacturing Entertainment and Gaming

Part Details for 933929990112

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933929990112 Part Data Attributes

933929990112 NXP Semiconductors
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933929990112 NXP Semiconductors TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description CERAMIC PACKAGE-4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 933929990112

This table gives cross-reference parts and alternative options found for 933929990112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 933929990112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF246 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc 933929990112 vs BLF246
BLF246 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors 933929990112 vs BLF246
Part Number Description Manufacturer Compare
BLF246 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc 933929990112 vs BLF246
DU2860T VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity 933929990112 vs DU2860T
DU2860U RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM 933929990112 vs DU2860U
MRF141 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN Motorola Mobility LLC 933929990112 vs MRF141
MRF174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN Motorola Mobility LLC 933929990112 vs MRF174
MRF173CQ VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC 933929990112 vs MRF173CQ
BLF147 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors 933929990112 vs BLF147
BLF246,112 BLF246 NXP Semiconductors 933929990112 vs BLF246,112
BLF346 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-6, FET RF Power NXP Semiconductors 933929990112 vs BLF346
VFT150-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc 933929990112 vs VFT150-28

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