Datasheets
934045250118 by:

57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

Part Details for 934045250118 by NXP Semiconductors

Overview of 934045250118 by NXP Semiconductors

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Applications Consumer Electronics Computing and Data Storage Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Part Details for 934045250118

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934045250118 Part Data Attributes

934045250118 NXP Semiconductors
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934045250118 NXP Semiconductors 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 57 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 228 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934045250118

This table gives cross-reference parts and alternative options found for 934045250118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934045250118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK7618-55T/R 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors 934045250118 vs BUK7618-55T/R
BUK7618-55/T3 Power Field-Effect Transistor Nexperia 934045250118 vs BUK7618-55/T3
BUK7618-55 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors 934045250118 vs BUK7618-55
BUK7618-55T/R Power Field-Effect Transistor Nexperia 934045250118 vs BUK7618-55T/R
BUK7618-55/T3 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors 934045250118 vs BUK7618-55/T3
BUK7618-55,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia 934045250118 vs BUK7618-55,118
Part Number Description Manufacturer Compare
BUK7618-55/T3 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors 934045250118 vs BUK7618-55/T3
SUB85N08-08 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix 934045250118 vs SUB85N08-08
SPD13N05L Power Field-Effect Transistor, 12.8A I(D), 55V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens 934045250118 vs SPD13N05L
SUB70N03-09P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix 934045250118 vs SUB70N03-09P
RFD16N06SM9A 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC 934045250118 vs RFD16N06SM9A
SPD01N60C3 0.8A, 600V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 Rochester Electronics LLC 934045250118 vs SPD01N60C3
SUD50N03-06P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix 934045250118 vs SUD50N03-06P
SPB47N10 Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens 934045250118 vs SPB47N10
IRFZ46ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier 934045250118 vs IRFZ46ZS
RFD16N06SM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC 934045250118 vs RFD16N06SM

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