Datasheets
934068055235 by: Nexperia

Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Details for 934068055235 by Nexperia

Overview of 934068055235 by Nexperia

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for 934068055235

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934068055235 Part Data Attributes:

934068055235 Nexperia
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934068055235 Nexperia Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.27 A
Drain-source On Resistance-Max 3.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934068055235

This table gives cross-reference parts and alternative options found for 934068055235. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934068055235, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N7002KW Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 PanJit Semiconductor 934068055235 vs 2N7002KW
2N7002KW-AU_R1_000A1 Small Signal Field-Effect Transistor, PanJit Semiconductor 934068055235 vs 2N7002KW-AU_R1_000A1
2N7002KW_R1_00001 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor 934068055235 vs 2N7002KW_R1_00001
BSS138WL6327HTMA1 Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG 934068055235 vs BSS138WL6327HTMA1
2N7002KW Small Signal Field-Effect Transistor Formosa Microsemi Co Ltd 934068055235 vs 2N7002KW
2N7002KTB_R1_10001 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 PanJit Semiconductor 934068055235 vs 2N7002KTB_R1_10001
BSS138WL6327HTSA1 Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG 934068055235 vs BSS138WL6327HTSA1
2N7002KW N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω, 3000-REEL onsemi 934068055235 vs 2N7002KW
2N7002KTB Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 PanJit Semiconductor 934068055235 vs 2N7002KTB
PJC7472B_R1_00001 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 PanJit Semiconductor 934068055235 vs PJC7472B_R1_00001

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