Datasheets
AGR19180EF by:

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4

Part Details for AGR19180EF by LSI Corporation

Overview of AGR19180EF by LSI Corporation

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Part Details for AGR19180EF

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AGR19180EF Part Data Attributes

AGR19180EF LSI Corporation
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AGR19180EF LSI Corporation RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer LSI CORP
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
JESD-609 Code e0
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for AGR19180EF

This table gives cross-reference parts and alternative options found for AGR19180EF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AGR19180EF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AGR19180EF RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Qorvo AGR19180EF vs AGR19180EF
AGR19180EF 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, FM-4 Avago Technologies AGR19180EF vs AGR19180EF
Part Number Description Manufacturer Compare
AGR19180EU RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-2 Broadcom Limited AGR19180EF vs AGR19180EU
AGR19180EU 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, SURFACE MOUNT PACKAGE-2 Avago Technologies AGR19180EF vs AGR19180EU
AGR19180EF RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET TriQuint Semiconductor AGR19180EF vs AGR19180EF
AGR19180EF RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Qorvo AGR19180EF vs AGR19180EF

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