Datasheets
AOTF4S60 by: Alpha & Omega Semiconductor

Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN

Part Details for AOTF4S60 by Alpha & Omega Semiconductor

Overview of AOTF4S60 by Alpha & Omega Semiconductor

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Part Details for AOTF4S60

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AOTF4S60 Part Data Attributes

AOTF4S60 Alpha & Omega Semiconductor
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AOTF4S60 Alpha & Omega Semiconductor Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 77 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AOTF4S60

This table gives cross-reference parts and alternative options found for AOTF4S60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF4S60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP60R950C6XKSA1 Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG AOTF4S60 vs IPP60R950C6XKSA1
LSC04N65 Power Field-Effect Transistor, 4A I(D), 650V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Xi’an Lonten Renewable Energy Technology Inc AOTF4S60 vs LSC04N65
AOT4S60L Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN Alpha & Omega Semiconductor AOTF4S60 vs AOT4S60L
AOU4S60 Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN PACKAGE-3 Alpha & Omega Semiconductor AOTF4S60 vs AOU4S60
LSG04N70 Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Xi’an Lonten Renewable Energy Technology Inc AOTF4S60 vs LSG04N70
LSH04N70 Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, Xi’an Lonten Renewable Energy Technology Inc AOTF4S60 vs LSH04N70
AOT4S60 Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Alpha & Omega Semiconductor AOTF4S60 vs AOT4S60

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