Part Details for AOTF4S60 by Alpha & Omega Semiconductor
Overview of AOTF4S60 by Alpha & Omega Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for AOTF4S60
AOTF4S60 CAD Models
AOTF4S60 Part Data Attributes
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AOTF4S60
Alpha & Omega Semiconductor
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Datasheet
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AOTF4S60
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Avalanche Energy Rating (Eas) | 77 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AOTF4S60
This table gives cross-reference parts and alternative options found for AOTF4S60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF4S60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPP60R950C6XKSA1 | Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | AOTF4S60 vs IPP60R950C6XKSA1 |
LSC04N65 | Power Field-Effect Transistor, 4A I(D), 650V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | AOTF4S60 vs LSC04N65 |
AOT4S60L | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN | Alpha & Omega Semiconductor | AOTF4S60 vs AOT4S60L |
AOU4S60 | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN PACKAGE-3 | Alpha & Omega Semiconductor | AOTF4S60 vs AOU4S60 |
LSG04N70 | Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Xi’an Lonten Renewable Energy Technology Inc | AOTF4S60 vs LSG04N70 |
LSH04N70 | Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Xi’an Lonten Renewable Energy Technology Inc | AOTF4S60 vs LSH04N70 |
AOT4S60 | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Alpha & Omega Semiconductor | AOTF4S60 vs AOT4S60 |