Datasheets
AP07SL60H-A by: Advanced Power Electronics Corp

POWER, FET

Part Details for AP07SL60H-A by Advanced Power Electronics Corp

Overview of AP07SL60H-A by Advanced Power Electronics Corp

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for AP07SL60H-A

Part # Distributor Description Stock Price Buy
Sense Electronic Company Limited TO-252 8527
RFQ

Part Details for AP07SL60H-A

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AP07SL60H-A Part Data Attributes

AP07SL60H-A Advanced Power Electronics Corp
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AP07SL60H-A Advanced Power Electronics Corp POWER, FET
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AP07SL60H-A

This table gives cross-reference parts and alternative options found for AP07SL60H-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP07SL60H-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD65R600C6AT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600C6AT
IPD65R600E6ATMA1 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6ATMA1
IPD65R600E6AT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600E6AT
IPD65R600E6BTMA1 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6BTMA1
IPD65R600C6BT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600C6BT
IPD65R600C6 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600C6
IPD65R600E6 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6
Part Number Description Manufacturer Compare
IPD65R600E6 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6
IPD65R600E6AT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600E6AT
IPD65R600C6 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600C6
IPD65R600C6BT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600C6BT
IPD65R600E6BTMA1 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6BTMA1
IPD65R600C6AT Power Field-Effect Transistor Infineon Technologies AG AP07SL60H-A vs IPD65R600C6AT
IPD65R600E6ATMA1 Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG AP07SL60H-A vs IPD65R600E6ATMA1

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