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Part Details for IPD65R600E6 by Infineon Technologies AG
Overview of IPD65R600E6 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPD65R600E6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 93 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 3179 |
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RFQ |
Part Details for IPD65R600E6
IPD65R600E6 CAD Models
IPD65R600E6 Part Data Attributes:
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IPD65R600E6
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD65R600E6
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 142 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 7.3 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD65R600E6
This table gives cross-reference parts and alternative options found for IPD65R600E6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R600E6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD65R600E6AT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R600E6 vs IPD65R600E6AT |
| AP07SL60H-A | POWER, FET | Advanced Power Electronics Corp | IPD65R600E6 vs AP07SL60H-A |
| IPD65R600C6BTMA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6 vs IPD65R600C6BTMA1 |
| IPD65R600E6ATMA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6 vs IPD65R600E6ATMA1 |
| IPD65R600E6BTMA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6 vs IPD65R600E6BTMA1 |
| IPD65R600C6AT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R600E6 vs IPD65R600C6AT |
| IPD65R600C6BT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R600E6 vs IPD65R600C6BT |
| IPD65R600E6BT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R600E6 vs IPD65R600E6BT |