Part Details for AP09N50I-HF by Advanced Power Electronics Corp
Overview of AP09N50I-HF by Advanced Power Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for AP09N50I-HF
AP09N50I-HF CAD Models
AP09N50I-HF Part Data Attributes
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AP09N50I-HF
Advanced Power Electronics Corp
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Datasheet
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AP09N50I-HF
Advanced Power Electronics Corp
TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.75 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AP09N50I-HF
This table gives cross-reference parts and alternative options found for AP09N50I-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP09N50I-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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9N50L-TF3-T | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | AP09N50I-HF vs 9N50L-TF3-T |
SIHF8N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | AP09N50I-HF vs SIHF8N50D-E3 |
TK9A45D | TRANSISTOR 9 A, 450 V, 0.77 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | AP09N50I-HF vs TK9A45D |
TSM9N50CIC0 | Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Taiwan Semiconductor | AP09N50I-HF vs TSM9N50CIC0 |
KF9N50F | Power Field-Effect Transistor, 9A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN | KEC | AP09N50I-HF vs KF9N50F |
R5009FNX | Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | AP09N50I-HF vs R5009FNX |