-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
TRANSISTOR POWER, FET, FET General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SIHF8N50D-E3-ND
|
DigiKey | MOSFET N-CH 500V 8.7A TO220 Min Qty: 1000 Lead time: 14 Weeks Container: Tube | Limited Supply - Call |
|
$0.5987 / $0.7000 | Buy Now |
|
Bristol Electronics | Min Qty: 3 | 50 |
|
$0.7031 / $1.8750 | Buy Now |
|
Quest Components | 680 |
|
$0.9900 / $2.4000 | Buy Now | |
|
Quest Components | 40 |
|
$1.2500 / $2.5000 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SIHF8N50D-E3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SIHF8N50D-E3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
|
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 33 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIHF8N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF8N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
9N50L-TF3-T | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | SIHF8N50D-E3 vs 9N50L-TF3-T |
TK9A45D | TRANSISTOR 9 A, 450 V, 0.77 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SIHF8N50D-E3 vs TK9A45D |
TSM9N50CIC0 | Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Taiwan Semiconductor | SIHF8N50D-E3 vs TSM9N50CIC0 |
AP09N50I-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SIHF8N50D-E3 vs AP09N50I-HF |
KF9N50F | Power Field-Effect Transistor, 9A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN | KEC | SIHF8N50D-E3 vs KF9N50F |
R5009FNX | Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF8N50D-E3 vs R5009FNX |