Part Details for APM4812KC-TRG by American Power Devices Inc
Overview of APM4812KC-TRG by American Power Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APM4812KC-TRG
APM4812KC-TRG CAD Models
APM4812KC-TRG Part Data Attributes
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APM4812KC-TRG
American Power Devices Inc
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Datasheet
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APM4812KC-TRG
American Power Devices Inc
Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ANPEC ELECTRONICS CORP | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APM4812KC-TRG
This table gives cross-reference parts and alternative options found for APM4812KC-TRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APM4812KC-TRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7807D1TRPBF | 8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 | International Rectifier | APM4812KC-TRG vs IRF7807D1TRPBF |
IRF7807D1-TR | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | APM4812KC-TRG vs IRF7807D1-TR |
IRF7807D2PBF | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | APM4812KC-TRG vs IRF7807D2PBF |
FDS8884 | N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ, 2500-REEL | onsemi | APM4812KC-TRG vs FDS8884 |
RJK0369DSP-00-J0 | 9A, 30V, 0.0225ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8 | Renesas Electronics Corporation | APM4812KC-TRG vs RJK0369DSP-00-J0 |
IRF7807D1TRHR | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | APM4812KC-TRG vs IRF7807D1TRHR |
IRF7807D1 | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | APM4812KC-TRG vs IRF7807D1 |
FDS8884 | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Fairchild Semiconductor Corporation | APM4812KC-TRG vs FDS8884 |