Datasheets
RJK0369DSP-00-J0 by: Renesas Electronics Corporation

9A, 30V, 0.0225ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8

Part Details for RJK0369DSP-00-J0 by Renesas Electronics Corporation

Overview of RJK0369DSP-00-J0 by Renesas Electronics Corporation

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Part Details for RJK0369DSP-00-J0

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RJK0369DSP-00-J0 Part Data Attributes

RJK0369DSP-00-J0 Renesas Electronics Corporation
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RJK0369DSP-00-J0 Renesas Electronics Corporation 9A, 30V, 0.0225ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.0225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RJK0369DSP-00-J0

This table gives cross-reference parts and alternative options found for RJK0369DSP-00-J0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RJK0369DSP-00-J0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7807D1PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier RJK0369DSP-00-J0 vs IRF7807D1PBF
IRF7807D1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RJK0369DSP-00-J0 vs IRF7807D1
IRF7807D1TRPBF 8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 International Rectifier RJK0369DSP-00-J0 vs IRF7807D1TRPBF
APM4812KC-TRG Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 American Power Devices Inc RJK0369DSP-00-J0 vs APM4812KC-TRG
IRF7807D2HR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier RJK0369DSP-00-J0 vs IRF7807D2HR
IRF7807D1TRHR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG RJK0369DSP-00-J0 vs IRF7807D1TRHR
IRF7807D2 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RJK0369DSP-00-J0 vs IRF7807D2
FDS8884 Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Fairchild Semiconductor Corporation RJK0369DSP-00-J0 vs FDS8884

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