Part Details for APT1201R6BVRG by Microchip Technology Inc
Results Overview of APT1201R6BVRG by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT1201R6BVRG Information
APT1201R6BVRG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT1201R6BVRG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5599
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Newark | Mosfet Mos5 1200 V 1.6 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1201R6BVRG RoHS: Compliant Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$10.0500 / $12.3800 | Buy Now |
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DISTI #
APT1201R6BVRG-ND
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DigiKey | MOSFET N-CH 1200V 8A TO-247 Min Qty: 60 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$12.3800 | Buy Now |
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DISTI #
APT1201R6BVRG
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Avnet Americas | - Tape and Reel (Alt: APT1201R6BVRG) COO: Philippines (the) RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tape & Reel | 0 |
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$10.0625 / $11.5000 | Buy Now |
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DISTI #
494-APT1201R6BVRG
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Mouser Electronics | MOSFETs MOSFET MOS5 1200 V 1.6 Ohm TO-247 RoHS: Compliant | 0 |
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$10.7000 / $12.3800 | Order Now |
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DISTI #
APT1201R6BVRG
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Microchip Technology Inc | MOSFET MOS 5 1200 V 1.6 Ohm TO-247, TO-247, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube | In Stock: 0 and Alternates Available |
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$9.4800 / $12.3800 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 8A Continuous Drain (Id) @ 25°C - 1.6 Ohms - TO-247-3 Package - Through Hole. RoHS: Compliant | 0 |
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$9.6400 / $12.0100 | Buy Now |
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DISTI #
APT1201R6BVRG
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TME | Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1.2kV, TO247-3 Min Qty: 1 | 0 |
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$14.3500 / $18.0200 | RFQ |
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NAC | MOSFET MOS5 1200 V 1.6 Ohm TO-247. - Si Transistors Product Line RoHS: Compliant Min Qty: 31 Package Multiple: 1 | 0 |
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$9.8200 / $11.8400 | Buy Now |
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Master Electronics | MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 8A Continuous Drain (Id) @ 25°C - 1.6 Ohms - TO-247-3 Package - Through Hole. RoHS: Compliant | 0 |
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$9.6400 / $12.0100 | Buy Now |
Part Details for APT1201R6BVRG
APT1201R6BVRG CAD Models
APT1201R6BVRG Part Data Attributes
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APT1201R6BVRG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT1201R6BVRG
Microchip Technology Inc
MOSFET MOS 5 1200 V 1.6 Ohm TO-247
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-247-3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Avalanche Energy Rating (Eas) | 1210 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
APT1201R6BVRG Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer to ensure good thermal conductivity. A minimum of 2 oz copper thickness is recommended for the PCB.
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To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, including providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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Although the datasheet specifies a maximum input voltage of 6V, it's recommended to limit the voltage on the VIN pin to 5.5V to ensure reliable operation and prevent damage to the device.
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Yes, the APT1201R6BVRG is suitable for battery-powered applications due to its low quiescent current (IQ) and high efficiency. However, it's essential to consider the device's power consumption and battery life requirements in your design.
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To troubleshoot issues with the device's output voltage regulation, check the input voltage, output load, and feedback resistors. Ensure that the input voltage is within the recommended range, the output load is within the specified current limit, and the feedback resistors are correctly configured.