Datasheets
APT1201R6BVRG by:
Microchip Technology Inc

MOSFET MOS 5 1200 V 1.6 Ohm TO-247

Part Details for APT1201R6BVRG by Microchip Technology Inc

Results Overview of APT1201R6BVRG by Microchip Technology Inc

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APT1201R6BVRG Information

APT1201R6BVRG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT1201R6BVRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5599
Newark Mosfet Mos5 1200 V 1.6 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1201R6BVRG RoHS: Compliant Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $12.3800
  • 100 $10.7000
  • 250 $10.2900
  • 500 $10.0500
$10.0500 / $12.3800 Buy Now
DISTI # APT1201R6BVRG-ND
DigiKey MOSFET N-CH 1200V 8A TO-247 Min Qty: 60 Lead time: 20 Weeks Container: Tube Temporarily Out of Stock
  • 60 $12.3800
$12.3800 Buy Now
DISTI # APT1201R6BVRG
Avnet Americas - Tape and Reel (Alt: APT1201R6BVRG) COO: Philippines (the) RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tape & Reel 0
  • 60 $11.5000
  • 120 $10.8784
  • 240 $10.5921
  • 480 $10.3205
  • 960 $10.0625
$10.0625 / $11.5000 Buy Now
DISTI # 494-APT1201R6BVRG
Mouser Electronics MOSFETs MOSFET MOS5 1200 V 1.6 Ohm TO-247 RoHS: Compliant 0
  • 1 $12.3800
  • 100 $10.7000
$10.7000 / $12.3800 Order Now
DISTI # APT1201R6BVRG
Microchip Technology Inc MOSFET MOS 5 1200 V 1.6 Ohm TO-247, TO-247, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube In Stock: 0 and Alternates Available
  • 1 $12.3800
  • 100 $10.7000
  • 250 $10.2900
  • 500 $10.0500
  • 1,000 $9.8200
  • 5,000 $9.4800
$9.4800 / $12.3800 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 8A Continuous Drain (Id) @ 25°C - 1.6 Ohms - TO-247-3 Package - Through Hole. RoHS: Compliant 0
  • 5 $12.0100
  • 25 $10.8800
  • 50 $10.5900
  • 100 $10.1900
  • 250 $9.9400
  • 500 $9.7900
  • 1,000 $9.6400
$9.6400 / $12.0100 Buy Now
DISTI # APT1201R6BVRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1.2kV, TO247-3 Min Qty: 1 0
  • 1 $18.0200
  • 3 $16.1500
  • 10 $14.3500
$14.3500 / $18.0200 RFQ
NAC MOSFET MOS5 1200 V 1.6 Ohm TO-247. - Si Transistors Product Line RoHS: Compliant Min Qty: 31 Package Multiple: 1 0
  • 1 $11.8400
  • 100 $10.7300
  • 500 $10.0600
  • 1,000 $9.8200
$9.8200 / $11.8400 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 8A Continuous Drain (Id) @ 25°C - 1.6 Ohms - TO-247-3 Package - Through Hole. RoHS: Compliant 0
  • 5 $12.0100
  • 25 $10.8800
  • 50 $10.5900
  • 100 $10.1900
  • 250 $9.9400
  • 500 $9.7900
  • 1,000 $9.6400
$9.6400 / $12.0100 Buy Now

Part Details for APT1201R6BVRG

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APT1201R6BVRG Part Data Attributes

APT1201R6BVRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1201R6BVRG Microchip Technology Inc MOSFET MOS 5 1200 V 1.6 Ohm TO-247
Rohs Code Yes
Part Life Cycle Code Active
Pin Count 3
Manufacturer Package Code TO-247-3
Reach Compliance Code Compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Avalanche Energy Rating (Eas) 1210 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Pulsed Drain Current-Max (IDM) 32 A
Surface Mount No
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon
equivalents icon

APT1201R6BVRG Frequently Asked Questions (FAQ)

  • Microchip recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer to ensure good thermal conductivity. A minimum of 2 oz copper thickness is recommended for the PCB.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, including providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • Although the datasheet specifies a maximum input voltage of 6V, it's recommended to limit the voltage on the VIN pin to 5.5V to ensure reliable operation and prevent damage to the device.

  • Yes, the APT1201R6BVRG is suitable for battery-powered applications due to its low quiescent current (IQ) and high efficiency. However, it's essential to consider the device's power consumption and battery life requirements in your design.

  • To troubleshoot issues with the device's output voltage regulation, check the input voltage, output load, and feedback resistors. Ensure that the input voltage is within the recommended range, the output load is within the specified current limit, and the feedback resistors are correctly configured.

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