Datasheets
ARF466FL by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6

Part Details for ARF466FL by Microsemi Corporation

Overview of ARF466FL by Microsemi Corporation

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Applications Telecommunications

Part Details for ARF466FL

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ARF466FL Part Data Attributes

ARF466FL Microsemi Corporation
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ARF466FL Microsemi Corporation RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description CERAMIC PACKAGE-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
JESD-609 Code e0
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for ARF466FL

This table gives cross-reference parts and alternative options found for ARF466FL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ARF466FL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ARF466FLG RF Power Field-Effect Transistor Microsemi Corporation ARF466FL vs ARF466FLG
ARF466AG RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Microsemi Corporation ARF466FL vs ARF466AG
ARF466A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation ARF466FL vs ARF466A
ARF466AG RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc ARF466FL vs ARF466AG
ARF466B RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation ARF466FL vs ARF466B

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