Part Details for AUIRF3805L by International Rectifier
Results Overview of AUIRF3805L by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
AUIRF3805L Information
AUIRF3805L by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF3805L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRF3805L-ND
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DigiKey | MOSFET N-CH 55V 160A TO262 Min Qty: 124 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2029 In Stock |
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$2.4200 | Buy Now |
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DISTI #
85965418
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Verical | Trans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101 Min Qty: 164 Package Multiple: 1 Date Code: 1701 | Americas - 2029 |
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$1.9375 / $2.3000 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant Status: Obsolete Min Qty: 1 | 2929 |
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$1.5500 / $1.9400 | Buy Now |
Part Details for AUIRF3805L
AUIRF3805L CAD Models
AUIRF3805L Part Data Attributes
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AUIRF3805L
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF3805L
International Rectifier
Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TO-262AA | |
| Package Description | Rohs Compliant, Plastic, To-262, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 940 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 890 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin Over Nickel | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for AUIRF3805L
This table gives cross-reference parts and alternative options found for AUIRF3805L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3805L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF3805L | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | AUIRF3805L vs AUIRF3805L |
| IRF3805SPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805SPBF |
| IRF3805STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805STRLPBF |
| IRF3805S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805S |
| AUIRF3805S | International Rectifier | Check for Price | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF3805L vs AUIRF3805S |
| IRF3805S | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805S |
| IRF3805SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805SPBF |
| IRF3805STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805STRRPBF |
| IRF3805STRR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF3805L vs IRF3805STRR |
| AUIRF3805S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF3805L vs AUIRF3805S |
AUIRF3805L Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the AUIRF3805L is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the AUIRF3805L, you need to know the drain-to-source on-state resistance (Rds(on)), the drain current (ID), and the voltage drop across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * ID^2 + Vds * ID.
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The recommended gate drive voltage for the AUIRF3805L is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the AUIRF3805L is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive circuitry to ensure reliable operation.
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To protect the AUIRF3805L from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's also essential to follow proper PCB design and layout practices to prevent voltage spikes and current surges.