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Part Details for AUIRF7341Q by Infineon Technologies AG
Results Overview of AUIRF7341Q by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRF7341Q Information
AUIRF7341Q by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF7341Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRF7341Q
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Maritex | MOSFET Devices, INFINEON, AUIRF7341Q, 55 V, 5.1 A, 20 V, 2.4 W Min Qty: 1 Package Multiple: 1 | 26870 |
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$1.4250 | Buy Now |
Part Details for AUIRF7341Q
AUIRF7341Q CAD Models
AUIRF7341Q Part Data Attributes
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AUIRF7341Q
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRF7341Q
Infineon Technologies AG
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Sop-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, High Reliability, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 140 Mj | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for AUIRF7341Q
This table gives cross-reference parts and alternative options found for AUIRF7341Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7341Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF7341QTR | Infineon Technologies AG | $0.9428 | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | AUIRF7341Q vs AUIRF7341QTR |
| IRF7341GPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | AUIRF7341Q vs IRF7341GPBF |
| IRF7341 | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | AUIRF7341Q vs IRF7341 |
AUIRF7341Q Frequently Asked Questions (FAQ)
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The AUIRF7341Q is a 40V, 4A, 100MHz half-bridge N-channel MOSFET, and its maximum operating frequency is 100MHz.
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To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to follow the thermal design guidelines outlined in the datasheet and application notes.
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The recommended gate drive voltage for the AUIRF7341Q is between 10V and 15V, with a maximum gate-source voltage of 20V.
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To protect the AUIRF7341Q from overvoltage and overcurrent, it is recommended to use a voltage regulator and a current limiter in the circuit design, and to follow the guidelines outlined in the datasheet and application notes.
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The maximum junction temperature of the AUIRF7341Q is 150°C, and it is recommended to keep the junction temperature below 125°C for optimal performance and reliability.