Part Details for AUIRFR024N by Infineon Technologies AG
Overview of AUIRFR024N by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRFR024N
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
AUIRFR024N
|
TME | Transistor: N-MOSFET, unipolar, 55V, 17A, 45W, DPAK Min Qty: 1 | 0 |
|
$1.1800 / $1.5900 | RFQ |
Part Details for AUIRFR024N
AUIRFR024N CAD Models
AUIRFR024N Part Data Attributes
|
AUIRFR024N
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
AUIRFR024N
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 71 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRFR024N
This table gives cross-reference parts and alternative options found for AUIRFR024N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR024N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024N vs AUIRFR024NTRL |
IRFR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 | Infineon Technologies AG | AUIRFR024N vs IRFR024NTRRPBF |
IRFR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRFR024N vs IRFR024NTR |
IRFR024NTRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024N vs IRFR024NTRPBF |
AUIRFR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024N vs AUIRFR024NTR |
IRFR024NTRLPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 | Infineon Technologies AG | AUIRFR024N vs IRFR024NTRLPBF |
IRFR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR024N vs IRFR024N |
IRFR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRFR024N vs IRFR024NPBF |
IRFR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRFR024N vs IRFR024N |
AUIRFR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR024N vs AUIRFR024NTRL |