Part Details for AUIRFS3006 by Infineon Technologies AG
Results Overview of AUIRFS3006 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (8 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRFS3006 Information
AUIRFS3006 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFS3006
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRFS3006
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Avnet Americas | - Rail/Tube (Alt: AUIRFS3006) COO: Mexico RoHS: Compliant Min Qty: 3000 Package Multiple: 50 Container: Tube | 0 |
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RFQ | |
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DISTI #
SP001521196
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EBV Elektronik | (Alt: SP001521196) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Part Details for AUIRFS3006
AUIRFS3006 CAD Models
AUIRFS3006 Part Data Attributes
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AUIRFS3006
Infineon Technologies AG
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Datasheet
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AUIRFS3006
Infineon Technologies AG
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | D2pak-3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, High Reliability, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 320 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 195 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1080 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for AUIRFS3006
This table gives cross-reference parts and alternative options found for AUIRFS3006. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFS3006, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS3006TRLPBF | Infineon Technologies AG | $2.3783 | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | AUIRFS3006 vs IRFS3006TRLPBF |
| IRFS3006PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | AUIRFS3006 vs IRFS3006PBF |
| IRFS3006TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | AUIRFS3006 vs IRFS3006TRRPBF |
| AUIRFS3006TRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRFS3006 vs AUIRFS3006TRL |
| AUIRFS3006 | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRFS3006 vs AUIRFS3006 |
| AUIRFS3006TRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | AUIRFS3006 vs AUIRFS3006TRL |
| AUIRFS3006TRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRFS3006 vs AUIRFS3006TRR |
| IRFS3006TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | AUIRFS3006 vs IRFS3006TRLPBF |
AUIRFS3006 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the AUIRFS3006 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
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Proper cooling of the AUIRFS3006 is crucial. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines provided by Infineon.
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The recommended gate drive voltage for the AUIRFS3006 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
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Yes, the AUIRFS3006 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation at high frequencies.
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To protect the AUIRFS3006 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Also, ensure that the device is operated within its specified voltage and current ratings, and consider using a fuse or circuit breaker to prevent damage in case of an overcurrent condition.