AWB512ES4(LOW-VOLT)
Description: SRAM Card, 256KX16, 200ns, CMOS

Overview of AWB512ES4(LOW-VOLT) by Seiko Epson Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F
TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4
TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E

CAD Models for AWB512ES4(LOW-VOLT) by Seiko Epson Corporation
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Part Data Attributes for AWB512ES4(LOW-VOLT) by Seiko Epson Corporation

AWB512ES4(LOW-VOLT)
Seiko Epson Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SEIKO EPSON CORP
Package Description
,
Reach Compliance Code
unknown
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
200 ns
Additional Feature
2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
JESD-30 Code
X-XXMA-X68
Memory Density
4194304 bit
Memory IC Type
SRAM CARD
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
68
Number of Words
262144 words
Number of Words Code
256000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
60 °C
Operating Temperature-Min
Organization
256KX16
Output Characteristics
3-STATE
Output Enable
YES
Package Body Material
UNSPECIFIED
Package Shape
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Standby Voltage-Min
2.5 V
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
UNSPECIFIED
Terminal Position
UNSPECIFIED
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  1. AWB512ES4(LOW-VOLT)
    Seiko Epson Corporation
    SRAM Card, 256KX16, 200ns, CMOS
    VS

Alternate Parts for AWB512ES4(LOW-VOLT)

This table gives cross-reference parts and alternative options found for AWB512ES4(LOW-VOLT). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AWB512ES4(LOW-VOLT), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
8P004SRV0201C25 SRAM Card, 256KX16, 250ns, CMOS, CARD-68 White Electronic Designs Corp AWB512ES4(LOW-VOLT) vs 8P004SRV0201C25
LWB513SD30 SRAM Card, 512KX8, MIXMOS Seiko Epson Corporation AWB512ES4(LOW-VOLT) vs LWB513SD30
AWB513ES2 256KX16 MULTI DEVICE SRAM CARD, 200ns, XMA68 Epson Electronics America Inc AWB512ES4(LOW-VOLT) vs AWB513ES2
8P512SRA0404I15 SRAM Card, 256KX16, 150ns, CMOS, CARD2-68 White Electronic Designs Corp AWB512ES4(LOW-VOLT) vs 8P512SRA0404I15
SM9SSR512KP325 SRAM Card, 512KX8, 250ns, CMOS SMART Modular Technology Inc AWB512ES4(LOW-VOLT) vs SM9SSR512KP325
MF3513-J1DATXX SRAM Card, 512KX8, 200ns, MOS Mitsubishi Electric AWB512ES4(LOW-VOLT) vs MF3513-J1DATXX
EDI8P512SEA0401I15 SRAM Card, 512KX8, 150ns, CMOS, Electronic Designs Inc AWB512ES4(LOW-VOLT) vs EDI8P512SEA0401I15
8R004SRV1302I15 SRAM Card, 256KX16, 150ns, CMOS, CARD-68 White Electronic Designs Corp AWB512ES4(LOW-VOLT) vs 8R004SRV1302I15
8P512SRA0304C15 SRAM Card, 256KX16, 150ns, CMOS, CARD2-68 White Electronic Designs Corp AWB512ES4(LOW-VOLT) vs 8P512SRA0304C15
8R004SRV1305C15 SRAM Card, 256KX16, 150ns, CMOS, CARD-68 White Electronic Designs Corp AWB512ES4(LOW-VOLT) vs 8R004SRV1305C15

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