Datasheets
BAV99T by:

Surface Mount Small Signal Switching Diode; Configuration: Dual,Series; VRRM Max (V): 85; IAV Max (A): 0.075; VFM Max (V): 1.25; @ IF (A): 0.15; IR Max (UA): 2; @VR (V): 75; TRR Max (NS): 4; Pin: F6; Package: SOT-523

Part Details for BAV99T by Galaxy Microelectronics

Overview of BAV99T by Galaxy Microelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BAV99T

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BAV99T Part Data Attributes

BAV99T Galaxy Microelectronics
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BAV99T Galaxy Microelectronics Surface Mount Small Signal Switching Diode; Configuration: Dual,Series; VRRM Max (V): 85; IAV Max (A): 0.075; VFM Max (V): 1.25; @ IF (A): 0.15; IR Max (UA): 2; @VR (V): 75; TRR Max (NS): 4; Pin: F6; Package: SOT-523
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-523
Package Description SOT-523, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 85 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3
Non-rep Pk Forward Current-Max 4 A
Number of Elements 2
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.155 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.15 W
Rep Pk Reverse Voltage-Max 85 V
Reverse Current-Max 100 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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