Part Details for BCP51-10 by Diotec Semiconductor AG
Overview of BCP51-10 by Diotec Semiconductor AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BCP51-10
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
4878-BCP51-10-ND
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DigiKey | BJT SOT-223 45V 1000MA PNP Min Qty: 4000 Lead time: 8 Weeks Container: Bulk | Temporarily Out of Stock |
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$0.0865 | Buy Now |
DISTI #
637-BCP51-10
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Mouser Electronics | Bipolar Transistors - BJT BJT, SOT-223, 45V, 1000mA, PNP RoHS: Compliant | 0 |
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$0.0700 / $0.4800 | Order Now |
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Onlinecomponents.com | BJT - SOT-223 - 45V - 1000mA - 0 RoHS: Compliant | 0 |
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$0.0541 / $0.0681 | Buy Now |
DISTI #
BCP51-10-DIO
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TME | Transistor: PNP, bipolar, 45V, 1A, 2W, SOT223 Min Qty: 5 | 0 |
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$0.0710 / $0.1080 | RFQ |
Part Details for BCP51-10
BCP51-10 CAD Models
BCP51-10 Part Data Attributes
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BCP51-10
Diotec Semiconductor AG
Buy Now
Datasheet
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BCP51-10
Diotec Semiconductor AG
Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 63 | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 1.3 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 120 MHz | |
VCEsat-Max | 0.5 V |