Part Details for BCP5216TA by Diodes Incorporated
Overview of BCP5216TA by Diodes Incorporated
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BCP5216TA
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
28AK6209
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Newark | Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5216TA RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 491 |
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$0.1020 / $0.3830 | Buy Now |
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DISTI #
BCP5216TACT-ND
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DigiKey | TRANS PNP 60V 1A SOT223-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
23081 In Stock |
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$0.0563 / $0.3700 | Buy Now |
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DISTI #
BCP5216TA
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Avnet Americas | Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: BCP5216TA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.0336 | Buy Now |
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DISTI #
522-BCP5216TA
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Mouser Electronics | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K RoHS: Compliant | 9205 |
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$0.0560 / $0.3700 | Buy Now |
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DISTI #
70437709
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RS | Trans GP BJT PNP 60V 1A 4Pin SOT223 | Diodes Inc BCP5216TA RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$0.1280 / $0.1820 | RFQ |
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Future Electronics | BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 5000Reel |
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$0.0579 / $0.0670 | Buy Now |
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Future Electronics | BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0579 / $0.0670 | Buy Now |
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DISTI #
BCP5216TA
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TME | Transistor: PNP, bipolar, 60V, 1A, 2W, SOT223 Min Qty: 1 | 710 |
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$0.0515 / $0.3484 | Buy Now |
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DISTI #
BCP5216TA
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Avnet Asia | Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R (Alt: BCP5216TA) RoHS: Compliant Min Qty: 8000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days | 0 |
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$0.0605 / $0.0677 | Buy Now |
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DISTI #
BCP5216TA
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Avnet Silica | Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R (Alt: BCP5216TA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for BCP5216TA
BCP5216TA CAD Models
BCP5216TA Part Data Attributes
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BCP5216TA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
BCP5216TA
Diodes Incorporated
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 25 pF | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 2 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 150 MHz | |
| VCEsat-Max | 0.5 V |