Part Details for BD237G-T60-K by Unisonic Technologies Co Ltd
Overview of BD237G-T60-K by Unisonic Technologies Co Ltd
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for BD237G-T60-K
BD237G-T60-K CAD Models
BD237G-T60-K Part Data Attributes
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BD237G-T60-K
Unisonic Technologies Co Ltd
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Datasheet
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BD237G-T60-K
Unisonic Technologies Co Ltd
Power Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 25 | |
| JEDEC-95 Code | TO-126 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz |
Alternate Parts for BD237G-T60-K
This table gives cross-reference parts and alternative options found for BD237G-T60-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD237G-T60-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BD237L-TF3-F-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD237G-T60-K vs BD237L-TF3-F-T |
| BD237G-TF3-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD237G-T60-K vs BD237G-TF3-T |
| BD237G-TF3-F-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD237G-T60-K vs BD237G-TF3-F-T |
| BD237 | 2.0 A, 80 V, 25W NPN Bipolar Power Transistor, TO-225, 500-BLKBX | onsemi | BD237G-T60-K vs BD237 |
| BD638 | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Micro Electronics Ltd | BD237G-T60-K vs BD638 |
| BD237L-T60-K | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD237G-T60-K vs BD237L-T60-K |
| BD237L-TF3-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD237G-T60-K vs BD237L-TF3-T |
| BD637 | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Micro Electronics Corporation | BD237G-T60-K vs BD637 |
| BD237STU | 2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor, 1920-TUBE | onsemi | BD237G-T60-K vs BD237STU |
| BD237 | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 | Micro Commercial Components | BD237G-T60-K vs BD237 |