Part Details for BD638 by Micro Electronics Ltd
Overview of BD638 by Micro Electronics Ltd
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Part Details for BD638
BD638 CAD Models
BD638 Part Data Attributes
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BD638
Micro Electronics Ltd
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Datasheet
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BD638
Micro Electronics Ltd
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRO ELECTRONICS LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 25 | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 140 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz |
Alternate Parts for BD638
This table gives cross-reference parts and alternative options found for BD638. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD638, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BD237L-TF3-F-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237L-TF3-F-T |
| BD237G-TF3-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237G-TF3-T |
| BD237G-TF3-F-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237G-TF3-F-T |
| BD237 | 2.0 A, 80 V, 25W NPN Bipolar Power Transistor, TO-225, 500-BLKBX | onsemi | BD638 vs BD237 |
| BD237L-T60-K | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237L-T60-K |
| BD237L-TF3-T | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237L-TF3-T |
| BD637 | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Micro Electronics Corporation | BD638 vs BD637 |
| BD237STU | 2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor, 1920-TUBE | onsemi | BD638 vs BD237STU |
| BD237 | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 | Micro Commercial Components | BD638 vs BD237 |
| BD237G-T6S-K | Power Bipolar Transistor, | Unisonic Technologies Co Ltd | BD638 vs BD237G-T6S-K |