Part Details for BF1012S by Infineon Technologies AG
Overview of BF1012S by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BF1012S
BF1012S CAD Models
BF1012S Part Data Attributes
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BF1012S
Infineon Technologies AG
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Datasheet
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BF1012S
Infineon Technologies AG
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOT-143 | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 16 V | |
Drain Current-Max (ID) | 0.025 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DUAL GATE, DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 18 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BF1012S
This table gives cross-reference parts and alternative options found for BF1012S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF1012S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BF1009S | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143, 4 PIN | Infineon Technologies AG | BF1012S vs BF1009S |
BF1012S | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN | Siemens | BF1012S vs BF1012S |
934050280115 | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, 4 PIN, FET RF Small Signal | NXP Semiconductors | BF1012S vs 934050280115 |
BF1109WRT/R | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, CMPAK-4, FET RF Small Signal | NXP Semiconductors | BF1012S vs BF1109WRT/R |
BF1109WR,115 | N-channel dual-gate MOSFET | NXP Semiconductors | BF1012S vs BF1109WR,115 |
BF1009S | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN | Siemens | BF1012S vs BF1009S |