Datasheets
BFP450H6433 by: Infineon Technologies AG

RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4

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BFP450H6433 Part Data Attributes

BFP450H6433 Infineon Technologies AG
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BFP450H6433 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.15 A
Collector-Base Capacitance-Max 0.4 pF
Collector-Emitter Voltage-Max 4 V
Configuration SINGLE
Highest Frequency Band X BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON GERMANIUM CARBON
Transition Frequency-Nom (fT) 42000 MHz

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