There are no models available for this part yet.
Overview of BFR193E6327 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 4 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Telecommunications
Price & Stock for BFR193E6327 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 2484 |
|
RFQ | ||||
| Quest Components | UHF BAND, SI, NPN, RF SMALL SIGNAL TRANSISTOR | 2899 |
|
$0.0605 / $0.1860 | Buy Now | ||
|
DISTI #
BFR193E6327
|
TME | Transistor: NPN, bipolar, RF, 20V, 80mA, 0.58W, SOT23 Min Qty: 5 | 2669 |
|
$0.1080 / $0.1820 | Buy Now | |
| ComSIT USA | NPN SILICON RF TRANSISTOR RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant |
|
|
RFQ |
CAD Models for BFR193E6327 by Infineon Technologies AG
Part Data Attributes for BFR193E6327 by Infineon Technologies AG
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Collector Current-Max (IC)
|
0.08 A
|
|
Collector-Base Capacitance-Max
|
1 pF
|
|
Collector-Emitter Voltage-Max
|
12 V
|
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Configuration
|
SINGLE
|
|
DC Current Gain-Min (hFE)
|
70
|
|
Highest Frequency Band
|
ULTRA HIGH FREQUENCY BAND
|
|
JESD-30 Code
|
R-PDSO-G3
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
NPN
|
|
Power Dissipation-Max (Abs)
|
0.58 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
SILICON
|
|
Transition Frequency-Nom (fT)
|
8000 MHz
|
Alternate Parts for BFR193E6327
This table gives cross-reference parts and alternative options found for BFR193E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFR193E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BF771E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN | Siemens | BFR193E6327 vs BF771E6327 |
| BFR193E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFR193E6327 vs BFR193E6327 |
| BF771E6327HTSA1 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, | Infineon Technologies AG | BFR193E6327 vs BF771E6327HTSA1 |
| BF771 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BFR193E6327 vs BF771 |
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