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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68AC4390
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Newark | Rf Trans, Npn, 12V, 0.09A, 150Deg C/0.3W, Transistor Polarity:Npn, Collector Emitter Voltage Max:12V, Transition Frequency:6Ghz, Power Dissipation:300Mw, Continuous Collector Current:90Ma, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Infineon BFR93AE6327HTSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6599 |
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$0.0740 | Buy Now |
DISTI #
86AK4399
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Newark | Transistor, Npn, 12V, 0.09A, Sot-23 Rohs Compliant: Yes |Infineon BFR93AE6327HTSA1 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.1010 / $0.1220 | Buy Now |
DISTI #
BFR93AE6327HTSA1CT-ND
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DigiKey | RF TRANS NPN 12V 6GHZ SOT23-3 Min Qty: 1 Lead time: 4 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
7051 In Stock |
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$0.0939 / $0.4300 | Buy Now |
DISTI #
BFR93AE6327HTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.09A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR93AE6327HTSA1) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 0 |
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$0.0643 / $0.0734 | Buy Now |
DISTI #
68AC4390
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Avnet Americas | Trans GP BJT NPN 12V 0.09A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 68AC4390) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 2888 Partner Stock |
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$0.1940 / $0.4530 | Buy Now |
DISTI #
726-BFR93AE6327HTSA1
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Mouser Electronics | RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant | 34785 |
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$0.0930 / $0.4300 | Buy Now |
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Future Electronics | BFR93A Series 12 V 90 mA Low Noise Silicon Bipolar RF Transistor - PG-SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 111000Reel |
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$0.0912 / $0.1040 | Buy Now |
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Future Electronics | BFR93A Series 12 V 90 mA Low Noise Silicon Bipolar RF Transistor - PG-SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 87000Reel |
|
$0.0912 / $0.1040 | Buy Now |
DISTI #
BFR93AE6327HTSA1
|
Avnet Americas | Trans GP BJT NPN 12V 0.09A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR93AE6327HTSA1) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 0 |
|
$0.0643 / $0.0734 | Buy Now |
DISTI #
68AC4390
|
Avnet Americas | Trans GP BJT NPN 12V 0.09A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 68AC4390) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 2888 Partner Stock |
|
$0.1940 / $0.4530 | Buy Now |
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BFR93AE6327HTSA1
Infineon Technologies AG
Buy Now
Datasheet
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BFR93AE6327HTSA1
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN,
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 0.05 A | |
Collector-Base Capacitance-Max | 0.9 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 70 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 6000 MHz |