Datasheets
BLF8G22LS-140U by:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLF8G22LS-140U by Ampleon

Overview of BLF8G22LS-140U by Ampleon

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Applications Consumer Electronics

Price & Stock for BLF8G22LS-140U

Part # Distributor Description Stock Price Buy
DISTI # BLF8G22LS-140U
Avnet Americas Power LDMOS Transistor N-Channel 65V 3-Pin SOT-502B Bulk - Rail/Tube (Alt: BLF8G22LS-140U) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Container: Tube 0
RFQ
DISTI # BLF8G22LS-140U
Avnet Americas Power LDMOS Transistor N-Channel 65V 3-Pin SOT-502B Bulk - Rail/Tube (Alt: BLF8G22LS-140U) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Container: Tube 0
RFQ

Part Details for BLF8G22LS-140U

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BLF8G22LS-140U Part Data Attributes:

BLF8G22LS-140U Ampleon
Buy Now Datasheet
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BLF8G22LS-140U Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 17.3 dB
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF8G22LS-140U

This table gives cross-reference parts and alternative options found for BLF8G22LS-140U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF8G22LS-140U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF8G22LS-140J RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF8G22LS-140U vs BLF8G22LS-140J
BLF8G22LS-140 RF Power Field-Effect Transistor, Ampleon BLF8G22LS-140U vs BLF8G22LS-140
Part Number Description Manufacturer Compare
934060923118 S BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors BLF8G22LS-140U vs 934060923118
934060923112 S BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors BLF8G22LS-140U vs 934060923112
BLF6G22LS-130,112 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF8G22LS-140U vs BLF6G22LS-130,112
BLF8G22LS-140 RF Power Field-Effect Transistor, Ampleon BLF8G22LS-140U vs BLF8G22LS-140
BLF6G22LS-130,112 BLF6G22LS-130 NXP Semiconductors BLF8G22LS-140U vs BLF6G22LS-130,112
BLF8G22LS-140J RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF8G22LS-140U vs BLF8G22LS-140J
BLF6G22LS-130,118 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF8G22LS-140U vs BLF6G22LS-130,118
BLF6G22LS-130,118 BLF6G22LS-130 NXP Semiconductors BLF8G22LS-140U vs BLF6G22LS-130,118
BLF6G22LS-130 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF8G22LS-140U vs BLF6G22LS-130

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