Datasheets
BSC011N03LSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC011N03LSATMA1 by Infineon Technologies AG

Overview of BSC011N03LSATMA1 by Infineon Technologies AG

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Price & Stock for BSC011N03LSATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47Y7992
Newark Mosfet, N-Ch, 30V, 230A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:230A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC011N03LSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 9091
  • 1 $1.8700
  • 10 $1.5600
  • 25 $1.4600
  • 50 $1.3400
  • 100 $1.2400
  • 250 $1.1400
  • 500 $1.0400
  • 1,000 $0.9030
$0.9030 / $1.8700 Buy Now
DISTI # BSC011N03LSATMA1CT-ND
DigiKey MOSFET N-CH 30V 37A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 41540
In Stock
  • 1 $1.2700
  • 10 $1.0560
  • 100 $0.8407
  • 500 $0.7590
  • 5,000 $0.7590
$0.7590 / $1.2700 Buy Now
DISTI # BSC011N03LSATMA1
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 10000
  • 5,000 $0.8096
  • 10,000 $0.7843
  • 20,000 $0.7590
  • 30,000 $0.7337
  • 40,000 $0.7084
$0.7084 / $0.8096 Buy Now
DISTI # 47Y7992
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y7992) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 663 Partner Stock
  • 1 $1.8700
  • 10 $1.5600
  • 25 $1.4600
  • 50 $1.3400
  • 100 $1.2400
$1.2400 / $1.8700 Buy Now
DISTI # 726-BSC011N03LSATMA1
Mouser Electronics MOSFET N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant 53416
  • 1 $1.1700
  • 10 $1.0300
  • 100 $0.8410
  • 500 $0.7590
  • 5,000 $0.7590
  • 10,000 $0.7400
$0.7400 / $1.1700 Buy Now
Future Electronics Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.7450
$0.7450 Buy Now
Future Electronics Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.7450
$0.7450 Buy Now
Future Electronics Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.7450
$0.7450 Buy Now
Bristol Electronics   36
RFQ
Rochester Electronics BSC011N03LS - OptiMOS Power-MOSFET, 30V RoHS: Compliant Status: Active Min Qty: 1 8338
  • 1 $0.8855
  • 25 $0.8678
  • 100 $0.8324
  • 500 $0.7969
  • 1,000 $0.7527
$0.7527 / $0.8855 Buy Now
DISTI # BSC011N03LSATMA1
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 10000
  • 5,000 $0.8096
  • 10,000 $0.7843
  • 20,000 $0.7590
  • 30,000 $0.7337
  • 40,000 $0.7084
$0.7084 / $0.8096 Buy Now
DISTI # 47Y7992
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y7992) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 663 Partner Stock
  • 1 $1.8700
  • 10 $1.5600
  • 25 $1.4600
  • 50 $1.3400
  • 100 $1.2400
$1.2400 / $1.8700 Buy Now
Ameya Holding Limited Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8 649381
RFQ
DISTI # BSC011N03LSATMA1
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 10000
  • 5,000 $0.8096
  • 10,000 $0.7843
  • 20,000 $0.7590
  • 30,000 $0.7337
  • 40,000 $0.7084
$0.7084 / $0.8096 Buy Now
DISTI # 47Y7992
Avnet Americas Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y7992) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 663 Partner Stock
  • 1 $1.8700
  • 10 $1.5600
  • 25 $1.4600
  • 50 $1.3400
  • 100 $1.2400
$1.2400 / $1.8700 Buy Now
DISTI # SP000799082
EBV Elektronik Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R (Alt: SP000799082) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2443418
element14 Asia-Pacific MOSFET, N CH, 30V, 100A, TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 8428
  • 1 $1.8861
  • 10 $1.5779
  • 100 $1.1522
  • 500 $1.0495
  • 1,000 $0.9100
  • 5,000 $0.8953
$0.8953 / $1.8861 Buy Now
DISTI # 2443418RL
element14 Asia-Pacific MOSFET, N CH, 30V, 100A, TDSON-8 RoHS: Compliant Min Qty: 100 Container: Reel 8428
  • 100 $1.1522
  • 500 $1.0495
  • 1,000 $0.9100
  • 5,000 $0.8953
$0.8953 / $1.1522 Buy Now
DISTI # 2443418
Farnell MOSFET, N CH, 30V, 100A, TDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Cut Tape 8428
  • 1 $1.5360
  • 10 $1.2613
  • 100 $0.9728
  • 500 $0.8617
  • 1,000 $0.8317
  • 5,000 $0.8005
$0.8005 / $1.5360 Buy Now
DISTI # 2443418RL
Farnell MOSFET, N CH, 30V, 100A, TDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 29 Weeks, 1 Days Container: Reel 8428
  • 100 $0.9728
  • 500 $0.8617
  • 1,000 $0.8317
  • 5,000 $0.8005
$0.8005 / $0.9728 Buy Now

Part Details for BSC011N03LSATMA1

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BSC011N03LSATMA1 Part Data Attributes

BSC011N03LSATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC011N03LSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.0014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC011N03LSATMA1

This table gives cross-reference parts and alternative options found for BSC011N03LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC011N03LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC011N03LS Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC011N03LSATMA1 vs BSC011N03LS
Part Number Description Manufacturer Compare
BSC011N03LS Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC011N03LSATMA1 vs BSC011N03LS
EPC2023ENGR Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30 Efficient Power Conversion BSC011N03LSATMA1 vs EPC2023ENGR
CSD17559Q5 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments BSC011N03LSATMA1 vs CSD17559Q5

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