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Part Details for CSD17559Q5 by Texas Instruments
Overview of CSD17559Q5 by Texas Instruments
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD17559Q5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-35582-1-ND
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DigiKey | MOSFET N-CH 30V 40A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3548 In Stock |
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$1.1900 / $2.8400 | Buy Now |
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DISTI #
2156-CSD17559Q5-ND
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DigiKey | MOSFET N-CH 30V 40A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Bulk MARKETPLACE PRODUCT |
1100 In Stock |
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$1.3100 | Buy Now |
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DISTI #
595-CSD17559Q5
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Mouser Electronics | MOSFET 30V N Ch NexFET Pwr MOSFET RoHS: Compliant | 2573 |
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$1.1600 / $2.6900 | Buy Now |
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Bristol Electronics | 530 |
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RFQ | ||
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Quest Components | 2000 |
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$0.6930 / $2.5200 | Buy Now | |
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Rochester Electronics | CSD17559Q5 30V, N Channel NexFET MOSFET, single SON5x6, 1.5mOhm RoHS: Not Compliant Status: Active Min Qty: 1 | 1100 |
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$1.1200 / $1.3200 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 30V 100A 8SON | 9250 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 30V 100A 8SON | 30486 |
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$1.3590 / $2.0380 | Buy Now |
Part Details for CSD17559Q5
CSD17559Q5 CAD Models
CSD17559Q5 Part Data Attributes
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CSD17559Q5
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD17559Q5
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 541 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 257 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 113 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD17559Q5
This table gives cross-reference parts and alternative options found for CSD17559Q5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17559Q5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC011N03LS | Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD17559Q5 vs BSC011N03LS |
| EPC2023ENGR | Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30 | Efficient Power Conversion | CSD17559Q5 vs EPC2023ENGR |
| BSC011N03LSATMA1 | Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | CSD17559Q5 vs BSC011N03LSATMA1 |
Resources and Additional Insights for CSD17559Q5
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