Part Details for BSC014N04LSITR by Infineon Technologies AG
Overview of BSC014N04LSITR by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSC014N04LSITR
BSC014N04LSITR CAD Models
BSC014N04LSITR Part Data Attributes
|
|
BSC014N04LSITR
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC014N04LSITR
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.002 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC014N04LSITR
This table gives cross-reference parts and alternative options found for BSC014N04LSITR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC014N04LSITR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC014N04LSATMA1 | Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN | Infineon Technologies AG | BSC014N04LSITR vs BSC014N04LSATMA1 |
| BSC014N04LS | Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN | Infineon Technologies AG | BSC014N04LSITR vs BSC014N04LS |
| BSC014N04LSATMA2 | Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SUPERSO8, TDSON-8FL, 8 PIN | Infineon Technologies AG | BSC014N04LSITR vs BSC014N04LSATMA2 |
| BSC014N04LSIATMA1 | Power Field-Effect Transistor, 31A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN | Infineon Technologies AG | BSC014N04LSITR vs BSC014N04LSIATMA1 |
| BSC014N04LSI | Power Field-Effect Transistor, 31A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN | Infineon Technologies AG | BSC014N04LSITR vs BSC014N04LSI |