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Transistors / Power Field-Effect Transistors / BSC027N04LSG
Datasheets
BSC027N04LSG by: Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC027N04LSG by Infineon Technologies AG

Overview of BSC027N04LSG by Infineon Technologies AG

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Price & Stock for BSC027N04LSG

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 50
  • 3 $1.8000
  • 13 $1.3500
  • 39 $1.1250
$1.1250 / $1.8000 Buy Now
Quest Components 24 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET 3
  • 1 $2.1700
  • 3 $1.7360
$1.7360 / $2.1700 Buy Now
Quest Components 24 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET 3992
  • 1 $2.3600
  • 551 $0.9735
  • 1,028 $0.8850
$0.8850 / $2.3600 Buy Now
Quest Components 24 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET 40
  • 1 $2.4000
  • 3 $1.8000
  • 15 $1.5000
$1.5000 / $2.4000 Buy Now
CHIPMALL.COM LIMITED TDSON-8-EP(5x6) MOSFETs ROHS 3443
  • 5 $0.6259
  • 50 $0.4578
  • 150 $0.4037
  • 500 $0.3466
  • 2,500 $0.3291
$0.3291 / $0.6259 Buy Now
LCSC TDSON-8-EP(5x6) MOSFETs ROHS 3443
  • 1 $0.6387
  • 10 $0.5238
  • 30 $0.4671
  • 100 $0.4119
  • 500 $0.3537
  • 1,000 $0.3358
$0.3358 / $0.6387 Buy Now
Win Source Electronics MOSFET N-CH 40V 100A TDSON-8 140171
  • 80 $0.6500
  • 190 $0.5340
  • 295 $0.5170
  • 400 $0.5000
  • 520 $0.4840
  • 695 $0.4340
$0.4340 / $0.6500 Buy Now

Part Details for BSC027N04LSG

BSC027N04LSG CAD Models

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BSC027N04LSG Part Data Attributes:

Parametric Data
BSC027N04LSG Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC027N04LSG Infineon Technologies AG Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 115 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.0041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC027N04LSG

This table gives cross-reference parts and alternative options found for BSC027N04LSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC027N04LSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIR166DP-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SIR166DP-T1-GE3
BSC059N04LSGATMA1 Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC027N04LSG vs BSC059N04LSGATMA1
BSC520N15NS3G Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC027N04LSG vs BSC520N15NS3G
SIR862DP-T1-GE3 Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SIR862DP-T1-GE3
BSC059N04LSG Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC027N04LSG vs BSC059N04LSG
SIR880DP-T1-GE3 Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SIR880DP-T1-GE3
BSC093N04LSG Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 Infineon Technologies AG BSC027N04LSG vs BSC093N04LSG
SI7738DP-T1-E3 Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SI7738DP-T1-E3
SIR804DP-T1-GE3 Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SIR804DP-T1-GE3
SIR426DP-T1-GE3 Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies BSC027N04LSG vs SIR426DP-T1-GE3

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