Part Details for BSC029N025SG by Infineon Technologies AG
Overview of BSC029N025SG by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC029N025SG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSC029N025SG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 371 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4999 In Stock |
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$0.8100 | Buy Now |
DISTI #
BSC029N025SG
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Avnet Americas | Trans MOSFET N-CH 25V 100A 8-Pin TDSON - Bulk (Alt: BSC029N025SG) RoHS: Compliant Min Qty: 447 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 4999 Partner Stock |
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$0.7311 / $0.8167 | Buy Now |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 40 |
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$1.4490 / $2.4150 | Buy Now | |
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Rochester Electronics | BSC029N025 - Power Field-Effect Transistor, 24A, 25V, 0.0045ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 4999 |
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$0.6942 / $0.8167 | Buy Now |
Part Details for BSC029N025SG
BSC029N025SG CAD Models
BSC029N025SG Part Data Attributes
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BSC029N025SG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC029N025SG
Infineon Technologies AG
Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 680 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 78 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC029N025SG
This table gives cross-reference parts and alternative options found for BSC029N025SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC029N025SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC029N025SG | 24A, 25V, 0.0045ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TDSON-8 | Rochester Electronics LLC | BSC029N025SG vs BSC029N025SG |