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Part Details for BSC120N03MSGATMA1 by Infineon Technologies AG
Results Overview of BSC120N03MSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC120N03MSGATMA1 Information
BSC120N03MSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC120N03MSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1775468
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Farnell | MOSFET, N CH, 39A, 30V, PG-TDSON-8 COO: MY RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 12843 |
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$0.1682 / $0.4666 | Buy Now |
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DISTI #
BSC120N03MSGATMA1
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Avnet Americas | Power MOSFET, N Channel, 30 V, 39 A, 0.01 ohm, PG-TDSON, Surface Mount - Tape and Reel (Alt: BSC120N03MSGATMA1) COO: Malaysia RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0 |
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RFQ | |
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DISTI #
BSC120N03MSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 36A, 28W, PG-TDSON-8 Min Qty: 3 | 0 |
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$0.3330 / $0.3370 | RFQ |
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Ameya Holding Limited | Single N-Channel 30 V 12 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8 | 4932 |
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RFQ | |
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DISTI #
BSC120N03MSGATMA1
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IBS Electronics | BSC120N03MSGATMA1,INFINEON Min Qty: 5000 Package Multiple: 1 | 0 |
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$0.3990 / $0.4200 | Buy Now |
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DISTI #
BSC120N03MSGATMA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 10000 |
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$0.1670 / $0.2610 | Buy Now |
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Chip Stock | SingleN-Channel30V12mOhm15nCOptiMOS™PowerMosfet-TDSON-8 | 15140 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 30V 39A TDSON-8 | 11640 |
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$0.2517 / $0.3251 | Buy Now |
Part Details for BSC120N03MSGATMA1
BSC120N03MSGATMA1 CAD Models
BSC120N03MSGATMA1 Part Data Attributes
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BSC120N03MSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC120N03MSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Green, Plastic, Tdson-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 10 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for BSC120N03MSGATMA1
This table gives cross-reference parts and alternative options found for BSC120N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC120N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC080N03MSGATMA1 | Infineon Technologies AG | $0.3887 | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC080N03MSGATMA1 |
| BSC120N03MSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC120N03MSG |
| BSC043N03LSCG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 30V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC043N03LSCG |
| BSC882N03MSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC882N03MSG |
| BSC091N03MSCG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC091N03MSCG |
| BSC043N03MSCG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC043N03MSCG |
| BSC050NE2LS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 60A I(D), 25V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC050NE2LS |
| SP000313120 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | BSC120N03MSGATMA1 vs SP000313120 |
| BSC030N03MSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC030N03MSG |
| BSC057N03MSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC120N03MSGATMA1 vs BSC057N03MSG |
BSC120N03MSGATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC120N03MSGATMA1 is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified range of 30V.
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A good PCB layout should include a solid ground plane, short and wide traces for the drain and source pins, and a thermal pad for heat dissipation. A heat sink or thermal interface material can also be used to improve thermal management.
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To protect the MOSFET from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
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The maximum current rating for the BSC120N03MSGATMA1 is 120A, but this can be affected by the operating temperature and PCB design.