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Transistors / Power Field-Effect Transistors / BSC100N03MSGATMA1
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BSC100N03MSGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC100N03MSGATMA1 by Infineon Technologies AG

Overview of BSC100N03MSGATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for BSC100N03MSGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y1812
Newark Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant: Yes |Infineon BSC100N03MSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 3434
  • 1 $0.7800
  • 10 $0.6930
  • 25 $0.6190
  • 50 $0.5460
  • 100 $0.4720
  • 250 $0.4340
  • 500 $0.3940
  • 1,000 $0.3360
$0.3360 / $0.7800 Buy Now
DISTI # BSC100N03MSGATMA1CT-ND
DigiKey MOSFET N-CH 30V 12A/44A TDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 44211
In Stock
  • 1 $0.7600
  • 10 $0.6570
  • 100 $0.4547
  • 500 $0.3799
  • 1,000 $0.3234
  • 2,000 $0.2880
  • 5,000 $0.2728
  • 10,000 $0.2526
  • 25,000 $0.2501
$0.2501 / $0.7600 Buy Now
DISTI # BSC100N03MSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2667
  • 10,000 $0.2584
  • 20,000 $0.2500
  • 30,000 $0.2417
  • 40,000 $0.2334
$0.2334 / $0.2667 Buy Now
DISTI # 726-BSC100N03MSGATMA
Mouser Electronics MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M RoHS: Compliant 18594
  • 1 $0.5500
  • 10 $0.4810
  • 100 $0.3650
  • 500 $0.3170
  • 1,000 $0.2580
  • 2,500 $0.2560
  • 5,000 $0.2510
  • 10,000 $0.2500
$0.2500 / $0.5500 Buy Now
DISTI # E02:0323_00274240
Arrow Electronics Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Date Code: 2327 Europe - 5000
  • 5,000 $0.2410
  • 10,000 $0.2397
  • 25,000 $0.2393
$0.2393 / $0.2410 Buy Now
DISTI # V72:2272_06391000
Arrow Electronics Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2233 Container: Cut Strips Americas - 3733
  • 1 $0.3420
  • 10 $0.3219
  • 25 $0.3187
  • 100 $0.2802
  • 250 $0.2774
  • 500 $0.2517
  • 1,000 $0.2280
  • 3,000 $0.2247
$0.2247 / $0.3420 Buy Now
Future Electronics N-Channel 30 V 10 mOhm OptiMOS™ MOSFET - PG-TISON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.2300
  • 10,000 $0.2250
  • 15,000 $0.2250
  • 20,000 $0.2200
$0.2200 / $0.2300 Buy Now
Future Electronics N-Channel 30 V 10 mOhm OptiMOS™ MOSFET - PG-TISON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.2300
  • 10,000 $0.2250
  • 15,000 $0.2250
  • 20,000 $0.2200
$0.2200 / $0.2300 Buy Now
DISTI # BSC100N03MSGATMA1
Avnet Americas Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N03MSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2667
  • 10,000 $0.2584
  • 20,000 $0.2500
  • 30,000 $0.2417
  • 40,000 $0.2334
$0.2334 / $0.2667 Buy Now
DISTI # BSC100N03MSGATMA1
TME Transistor: N-MOSFET, unipolar, 30V, 28A, Idm: 176A, 30W, PG-TDSON-8 Min Qty: 3 0
  • 3 $0.4900
  • 25 $0.4330
  • 100 $0.3880
  • 250 $0.3620
  • 1,000 $0.3360
$0.3360 / $0.4900 RFQ
CHIPMALL.COM LIMITED Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration power stage 5x6 500
  • 1 $0.3189
$0.3189 Buy Now
DISTI # SP000311515
EBV Elektronik Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: SP000311515) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC100N03MSGATMA1

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BSC100N03MSGATMA1 Part Data Attributes:

Parametric Data
BSC100N03MSGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC100N03MSGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 176 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC100N03MSGATMA1

This table gives cross-reference parts and alternative options found for BSC100N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC100N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDMS7692A N-Channel PowerTrench® MOSFET 30V, 8mΩ, 3000-REEL onsemi BSC100N03MSGATMA1 vs FDMS7692A
BSC050N03MSGATMA1 Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC050N03MSGATMA1
BSC883N03MSG Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC883N03MSG
BSC882N03MSG Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC882N03MSG
BSC028N03MSCG Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC028N03MSCG
FDMS7682 Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation BSC100N03MSGATMA1 vs FDMS7682
BSC090N03MSG Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC090N03MSG
BSC080N03MSGATMA1 Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC080N03MSGATMA1
FDMS7692A Power Field-Effect Transistor, 13.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation BSC100N03MSGATMA1 vs FDMS7692A
BSC037N03LSCG Power Field-Effect Transistor, 21A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC100N03MSGATMA1 vs BSC037N03LSCG

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