Part Details for BSC152N10NSFG by Infineon Technologies AG
Overview of BSC152N10NSFG by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BSC152N10NSFG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSC152N10NSFG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 247 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
9249 In Stock |
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$1.2200 | Buy Now |
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Rochester Electronics | BSC152N10 - Power Field-Effect Transistor, 9.4A, 100V, 0.0152ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 17576 |
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$1.0400 / $1.2300 | Buy Now |
Part Details for BSC152N10NSFG
BSC152N10NSFG CAD Models
BSC152N10NSFG Part Data Attributes
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BSC152N10NSFG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC152N10NSFG
Infineon Technologies AG
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 155 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.0152 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 114 W | |
Pulsed Drain Current-Max (IDM) | 252 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC152N10NSFG
This table gives cross-reference parts and alternative options found for BSC152N10NSFG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC152N10NSFG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC152N10NSFGATMA1 | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC152N10NSFG vs BSC152N10NSFGATMA1 |