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Transistors Power Field-Effect Transistors BSC520N15NS3GATMA1

BSC520N15NS3GATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Overview of BSC520N15NS3GATMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 16 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 2 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for BSC520N15NS3GATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 47W3314
Newark Mosfet, N Channel, 150V, 21A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC520N15NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1084
  • 1 $0.5760
  • 10 $0.5760
  • 100 $0.5760
  • 500 $0.5760
  • 1,000 $0.5050
  • 2,500 $0.4750
$0.4750 / $0.5760 Buy Now
DISTI # BSC520N15NS3GATMA1CT-ND
DigiKey MOSFET N-CH 150V 21A TDSON-8-5 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2965
In Stock
  • 1 $1.6300
  • 10 $1.0340
  • 100 $0.6927
  • 500 $0.5460
  • 1,000 $0.4987
  • 2,000 $0.4588
  • 5,000 $0.4157
  • 10,000 $0.4153
$0.4153 / $1.6300 Buy Now
DISTI # 47W3314
Avnet Americas Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, SuperSOT, Surface Mount - Bulk (Alt: 47W3314) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 150
1084 Partner Stock
  • 1 $1.5900
  • 10 $1.3200
  • 100 $1.0500
  • 500 $0.8890
  • 1,000 $0.7550
$0.7550 / $1.5900 Buy Now
DISTI # BSC520N15NS3GATMA1
Avnet Americas Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, SuperSOT, Surface Mount - Tape and Reel (Alt: BSC520N15NS3GATMA1) RoHS: Compliant Min Qty: 753 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 30000 Partner Stock
  • 1 $0.4845
  • 25 $0.4748
  • 100 $0.4554
  • 500 $0.4361
  • 1,000 $0.4118
$0.4118 / $0.4845 Buy Now
DISTI # BSC520N15NS3GATMA1
Avnet Americas Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP - Tape and Reel (Alt: BSC520N15NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
Future Electronics Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 5,000 $0.3550
  • 10,000 $0.3450
$0.3450 / $0.3550 Buy Now
Future Electronics Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 5,000 $0.3550
  • 10,000 $0.3450
$0.3450 / $0.3550 Buy Now
Rochester Electronics BSC520N15NS3 G - OptiMOS3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 30000
  • 1 $0.4845
  • 25 $0.4748
  • 100 $0.4554
  • 500 $0.4361
  • 1,000 $0.4118
$0.4118 / $0.4845 Buy Now
Ameya Holding Limited Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TDSON-8 5000
RFQ
DISTI # C1S322000232802
Chip1Stop Trans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R RoHS: Compliant 25000
  • 5,000 $0.3640
  • 10,000 $0.3580
  • 20,000 $0.3530
$0.3530 / $0.3640 Buy Now
DISTI # C1S322000132946
Chip1Stop Trans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R RoHS: Compliant Container: Cut Tape 13449
  • 1 $0.5720
  • 10 $0.4730
  • 50 $0.4590
  • 100 $0.4580
  • 200 $0.4520
  • 500 $0.4510
  • 1,000 $0.4500
  • 2,000 $0.4480
  • 5,000 $0.4350
$0.4350 / $0.5720 Buy Now
DISTI # C1S322000403808
Chip1Stop Trans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R RoHS: Compliant 3665
  • 1 $1.1100
  • 10 $0.7930
  • 25 $0.7539
  • 100 $0.7010
$0.7010 / $1.1100 Buy Now
DISTI # SP000521716
EBV Elektronik Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, SuperSOT, Surface Mount (Alt: SP000521716) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 5000
Buy Now
LCSC 150V 21A 57W 52m18A10V 4V35uA 1 N-Channel TDSON-8 MOSFETs ROHS 131
  • 1 $1.0653
  • 10 $0.9064
  • 30 $0.8182
  • 100 $0.7191
  • 500 $0.6389
  • 1,000 $0.6184
$0.6184 / $1.0653 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 5000
  • 5,000 $0.6516
$0.6516 Buy Now
Win Source Electronics MOSFET N-CH 150V 21A TDSON-8 24000
  • 6 $8.7320
  • 14 $7.1650
  • 22 $6.9410
  • 30 $6.7170
  • 39 $6.4930
  • 52 $5.8210
$5.8210 / $8.7320 Buy Now

CAD Models for BSC520N15NS3GATMA1 by Infineon Technologies AG
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Part Data Attributes for BSC520N15NS3GATMA1 by Infineon Technologies AG
Parametric Data

BSC520N15NS3GATMA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-F5
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
60 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
21 A
Drain-source On Resistance-Max
0.052 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
57 W
Pulsed Drain Current-Max (IDM)
84 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. BSC520N15NS3GATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
    VS

Alternate Parts for BSC520N15NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC520N15NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC520N15NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPD530N15N3GATMA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG BSC520N15NS3GATMA1 vs IPD530N15N3GATMA1
BSZ520N15NS3GATMA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSC520N15NS3GATMA1 vs BSZ520N15NS3GATMA1

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