-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
BSH108 - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
34R3008
|
Newark | Mosfet, N-Ch, 30V, 1.9A, 0.83W, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:1.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Nexperia BSH108,215 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 80767 |
|
$0.1090 / $0.1190 | Buy Now |
DISTI #
1727-4925-1-ND
|
DigiKey | MOSFET N-CH 30V 1.9A TO236AB Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
92907 In Stock |
|
$0.0850 / $0.5400 | Buy Now |
DISTI #
BSH108,215
|
Avnet Americas | Trans MOSFET N-CH 30V 1.9A 3-Pin TO-236AB T/R - Tape and Reel (Alt: BSH108,215) RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1568 | Buy Now |
DISTI #
771-BSH108215
|
Mouser Electronics | MOSFETs BSH108/SOT23/TO-236AB RoHS: Compliant | 26327 |
|
$0.0750 / $0.2800 | Buy Now |
|
Future Electronics | BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks Container: Reel | 237000Reel |
|
$0.0684 / $0.0757 | Buy Now |
|
Future Electronics | BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 12000 Package Multiple: 3000 Lead time: 6 Weeks Container: Reel | 0Reel |
|
$0.0683 / $0.0756 | Buy Now |
DISTI #
BSH108.215
|
TME | Transistor: N-MOSFET, unipolar, 30V, 1.2A, 830mW, SOT23,TO236AB Min Qty: 1 | 3840 |
|
$0.1200 / $0.2740 | Buy Now |
DISTI #
BSH108,215
|
Avnet Asia | Trans MOSFET N-CH 30V 1.9A 3-Pin TO-236AB T/R (Alt: BSH108,215) RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days | 0 |
|
$0.0667 / $0.0810 | Buy Now |
DISTI #
BSH108,215
|
Avnet Silica | Trans MOSFET N-CH 30V 1.9A 3-Pin TO-236AB T/R (Alt: BSH108,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | Silica - 69000 |
|
Buy Now | |
|
Chip Stock | 8487 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
BSH108,215
Nexperia
Buy Now
Datasheet
|
Compare Parts:
BSH108,215
Nexperia
BSH108 - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSH108,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSH108,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
934055571215 | Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | Nexperia | BSH108,215 vs 934055571215 |
BSH108TRL | TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | NXP Semiconductors | BSH108,215 vs BSH108TRL |
BSH108TRL13 | TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | NXP Semiconductors | BSH108,215 vs BSH108TRL13 |
BSH108 | Small Signal Field-Effect Transistor | Nexperia | BSH108,215 vs BSH108 |