Part Details for BSO200N03S by Infineon Technologies AG
Overview of BSO200N03S by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSO200N03S
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 162 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 2496 |
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RFQ |
Part Details for BSO200N03S
BSO200N03S CAD Models
BSO200N03S Part Data Attributes
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BSO200N03S
Infineon Technologies AG
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Datasheet
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BSO200N03S
Infineon Technologies AG
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOIC | |
Package Description | GREEN, PLASTIC PACKAGE-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 46 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.56 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSO200N03S
This table gives cross-reference parts and alternative options found for BSO200N03S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO200N03S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDS4410 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | BSO200N03S vs FDS4410 |
SI6981DQT-1 | TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal | Vishay Siliconix | BSO200N03S vs SI6981DQT-1 |
SI6913DQ-T1-E3 | Small Signal Field-Effect Transistor, 4.9A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | Vishay Intertechnologies | BSO200N03S vs SI6913DQ-T1-E3 |
RRS100N03TB | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | BSO200N03S vs RRS100N03TB |
NDH853N | Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | BSO200N03S vs NDH853N |
FDR4420A | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | BSO200N03S vs FDR4420A |
FDS4410D84Z | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | BSO200N03S vs FDS4410D84Z |
FY10AAJ-03A | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Mitsubishi Electric | BSO200N03S vs FY10AAJ-03A |
NDH8521C | 3800mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 | Rochester Electronics LLC | BSO200N03S vs NDH8521C |
NDS8410S | Si, SMALL SIGNAL, FET, SO-8 | Texas Instruments | BSO200N03S vs NDS8410S |