Datasheets
BSO615NGXT by: Infineon Technologies AG

Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOP-8

Part Details for BSO615NGXT by Infineon Technologies AG

Overview of BSO615NGXT by Infineon Technologies AG

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Part Details for BSO615NGXT

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BSO615NGXT Part Data Attributes

BSO615NGXT Infineon Technologies AG
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BSO615NGXT Infineon Technologies AG Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSO615NGXT

This table gives cross-reference parts and alternative options found for BSO615NGXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO615NGXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSO615NG 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC BSO615NGXT vs BSO615NG
BSO615NG Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Infineon Technologies AG BSO615NGXT vs BSO615NG
Part Number Description Manufacturer Compare
IRF7102TR Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BSO615NGXT vs IRF7102TR
NDS9959 Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation BSO615NGXT vs NDS9959
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor BSO615NGXT vs RF1K4915496
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG BSO615NGXT vs IRF7103
NDS9959_NL Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation BSO615NGXT vs NDS9959_NL
BSO615NG 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC BSO615NGXT vs BSO615NG
NDS9957 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation BSO615NGXT vs NDS9957
MMDF1N05EG Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 Motorola Semiconductor Products BSO615NGXT vs MMDF1N05EG
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi BSO615NGXT vs MMDF1N05ER2
IRF7103TRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, Infineon Technologies AG BSO615NGXT vs IRF7103TRPBF

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