Datasheets
IRF7103TRPBF by:

Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,

Part Details for IRF7103TRPBF by Infineon Technologies AG

Overview of IRF7103TRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7103TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 83AK6934
Newark Mosfet, N-Ch, 50V, 3A, Soic Rohs Compliant: Yes |Infineon IRF7103TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 16000
  • 4,000 $0.4030
  • 8,000 $0.3920
  • 16,000 $0.3660
  • 24,000 $0.3650
  • 40,000 $0.3630
$0.3630 / $0.4030 Buy Now
DISTI # 19K8221
Newark Dual N Channel Mosfet, 50V, 3A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:50V, Drain Source Voltage Vds P Channel:50V, Continuous Drain Current Id N Channel:3A, Continuous Drain Current Id P Channel:3A Rohs Compliant: Yes |Infineon IRF7103TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2031
  • 1 $0.2470
$0.2470 Buy Now
DISTI # IRF7103PBFCT-ND
DigiKey MOSFET 2N-CH 50V 3A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 13974
In Stock
  • 1 $0.9300
  • 10 $0.8100
  • 100 $0.5609
  • 500 $0.4686
  • 1,000 $0.3988
  • 2,000 $0.3552
  • 4,000 $0.3552
  • 8,000 $0.3365
  • 12,000 $0.3116
  • 28,000 $0.3085
$0.3085 / $0.9300 Buy Now
DISTI # IRF7103TRPBF
Avnet Americas Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7103TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel 176000
RFQ
DISTI # 70017405
RS IRF7103TRPBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $0.6400
  • 200 $0.6000
  • 1,000 $0.5700
  • 2,000 $0.5400
$0.5400 / $0.6400 RFQ
Future Electronics Dual N-Channel 50V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Container: Reel 240000
Reel
  • 4,000 $0.1340
  • 8,000 $0.1310
  • 12,000 $0.1300
  • 16,000 $0.1290
  • 20,000 $0.1250
$0.1250 / $0.1340 Buy Now
Future Electronics Dual N-Channel 50V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Container: Reel 0
Reel
  • 4,000 $0.2550
  • 8,000 $0.2500
  • 12,000 $0.2500
  • 16,000 $0.2450
  • 20,000 $0.2400
$0.2400 / $0.2550 Buy Now
DISTI # IRF7103TRPBF
TME Transistor: N-MOSFET x2, unipolar, 50V, 3A, 2W, SO8 Min Qty: 1 0
  • 1 $0.7130
  • 5 $0.4000
  • 25 $0.3270
  • 100 $0.2900
  • 500 $0.2600
  • 4,000 $0.2430
$0.2430 / $0.7130 RFQ
DISTI # TMOSP11844
Rutronik MOSFET DUAL N-CH SO-8 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel Stock DE - 4000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 4,000 $0.2497
  • 8,000 $0.2354
  • 12,000 $0.2211
  • 16,000 $0.1997
  • 24,000 $0.1926
$0.1926 / $0.2497 Buy Now
Chip 1 Exchange INSTOCK 800
RFQ
DISTI # SP001562004
EBV Elektronik Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R (Alt: SP001562004) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited SOP-8 4000
RFQ
Win Source Electronics MOSFET 2N-CH 50V 3A 8-SOIC 326000
  • 190 $0.2690
  • 455 $0.2210
  • 705 $0.2140
  • 970 $0.2070
  • 1,250 $0.2000
  • 1,680 $0.1790
$0.1790 / $0.2690 Buy Now

Part Details for IRF7103TRPBF

IRF7103TRPBF CAD Models

IRF7103TRPBF Part Data Attributes

IRF7103TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7103TRPBF Infineon Technologies AG Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7103TRPBF

This table gives cross-reference parts and alternative options found for IRF7103TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7103TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7103TRPBF vs IRF7103
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7103TRPBF vs IRF7103
IRF7103TRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7103TRPBF vs IRF7103TRPBF
IRF7103PBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7103TRPBF vs IRF7103PBF
IRF7103PBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7103TRPBF vs IRF7103PBF
AUIRF7103QTR Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7103TRPBF vs AUIRF7103QTR
AUIRF7103QTR Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7103TRPBF vs AUIRF7103QTR
IRF7103UTRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7103TRPBF vs IRF7103UTRPBF
AUIRF7103Q Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7103TRPBF vs AUIRF7103Q
Part Number Description Manufacturer Compare
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi IRF7103TRPBF vs MMDF1N05ER2
NDS9959_NL Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7103TRPBF vs NDS9959_NL
BSO615NG 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC IRF7103TRPBF vs BSO615NG
IRF7102PBF Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 International Rectifier IRF7103TRPBF vs IRF7102PBF
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor IRF7103TRPBF vs RF1K4915496
IRF7102 Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF7103TRPBF vs IRF7102
AUIRF7103Q Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7103TRPBF vs AUIRF7103Q
AUIRF7103Q Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7103TRPBF vs AUIRF7103Q
RF1K49154 2A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation IRF7103TRPBF vs RF1K49154
AUIRF7103QTR Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7103TRPBF vs AUIRF7103QTR

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