Part Details for BSP135E6906 by Siemens
Overview of BSP135E6906 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSP135E6906
BSP135E6906 CAD Models
BSP135E6906 Part Data Attributes
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BSP135E6906
Siemens
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Datasheet
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BSP135E6906
Siemens
Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 60 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 0.3 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP135E6906
This table gives cross-reference parts and alternative options found for BSP135E6906. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP135E6906, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP135 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP135E6906 vs BSP135 |
BSP135E6327 | Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP135E6906 vs BSP135E6327 |
BSP135L6906 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP135E6906 vs BSP135L6906 |
BSP135 | Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BSP135E6906 vs BSP135 |