Part Details for BSP296E6327 by Infineon Technologies AG
Overview of BSP296E6327 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSP296E6327
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Chip1Cloud | MOSFET N-CH 100V 1.1A SOT223 | 18500 |
|
RFQ |
Part Details for BSP296E6327
BSP296E6327 CAD Models
BSP296E6327 Part Data Attributes
|
|
BSP296E6327
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSP296E6327
Infineon Technologies AG
Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT-223 | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.79 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP296E6327
This table gives cross-reference parts and alternative options found for BSP296E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP296E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP296NH6327XTSA1 | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP296E6327 vs BSP296NH6327XTSA1 |
| BSP296 | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP296E6327 vs BSP296 |
| BSP296L6433 | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP296E6327 vs BSP296L6433 |
| BSP296NL6327HTSA1 | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP296E6327 vs BSP296NL6327HTSA1 |