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Part Details for BSP320SH6327XTSA1 by Infineon Technologies AG
Results Overview of BSP320SH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSP320SH6327XTSA1 Information
BSP320SH6327XTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSP320SH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2617430
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Farnell | MOSFET, N-CH, 60V, 2.9A, SOT-223-4 COO: China RoHS: Compliant Min Qty: 1 Lead time: 99 Weeks, 1 Days Container: Cut Tape | 15 |
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$0.7292 / $0.9945 | Buy Now |
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DISTI #
2617430RL
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Farnell | MOSFET, N-CH, 60V, 2.9A, SOT-223-4 COO: China RoHS: Compliant Min Qty: 10 Lead time: 99 Weeks, 1 Days Container: Tape & Reel | 15 |
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$0.7292 | Buy Now |
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DISTI #
4319018
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Farnell | MOSFET, N-CH, 60V, 2.9A, SOT-223 COO: China RoHS: Compliant Min Qty: 1000 Lead time: 37 Weeks, 1 Days Container: Tape & Reel | 0 |
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$0.3919 / $0.3999 | Buy Now |
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DISTI #
91939238
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Verical | Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 994 Package Multiple: 1 Date Code: 2001 | Americas - 6000 |
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$0.2601 / $0.3775 | Buy Now |
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DISTI #
91939245
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Verical | Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 994 Package Multiple: 1 Date Code: 1901 | Americas - 6000 |
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$0.2601 / $0.3775 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Obsolete Min Qty: 1 | 12000 |
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$0.2081 / $0.3356 | Buy Now |
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Chip 1 Exchange | INSTOCK | 5446 |
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RFQ | |
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Chip Stock | TransMOSFETN-CH60V2.9AAutomotive4-Pin(3+Tab)SOT-223T/R | 6500 |
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RFQ | |
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Chip-Germany GmbH | 1574 |
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RFQ | ||
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Win Source Electronics | MOSFET N-CH 60V 2.9A SOT223 | 40 |
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$0.3172 / $0.4758 | Buy Now |
Part Details for BSP320SH6327XTSA1
BSP320SH6327XTSA1 CAD Models
BSP320SH6327XTSA1 Part Data Attributes
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BSP320SH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP320SH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Green, Plastic Package-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 60 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.9 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 11.6 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | Silicon |
Alternate Parts for BSP320SH6327XTSA1
This table gives cross-reference parts and alternative options found for BSP320SH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP320SH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSP320SL6327HTSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP320SH6327XTSA1 vs BSP320SL6327HTSA1 |
| UF3055L-TN3-R | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | BSP320SH6327XTSA1 vs UF3055L-TN3-R |
| BSP320SH6433XTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | BSP320SH6327XTSA1 vs BSP320SH6433XTMA1 |
BSP320SH6327XTSA1 Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
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Follow the recommended operating temperature range (Tj) of -40°C to 150°C, and consider using thermal interface materials to reduce thermal resistance.
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Use a shielded enclosure, ensure proper grounding, and follow Infineon's guidelines for PCB layout and component placement to minimize electromagnetic interference.
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Implement external protection circuits, such as TVS diodes and current limiting resistors, to prevent damage from voltage and current surges.
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Store the devices in their original packaging, avoid exposure to moisture and extreme temperatures, and handle the devices by the body or leads to prevent electrostatic discharge.