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Transistors / Small Signal Field-Effect Transistors / BSS123G-3L
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BSS123G-3L by: Galaxy Microelectronics

Small Signal Field-Effect Transistor,

Part Details for BSS123G-3L by Galaxy Microelectronics

Overview of BSS123G-3L by Galaxy Microelectronics

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Part Details for BSS123G-3L

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BSS123G-3L Part Data Attributes:

Parametric Data
BSS123G-3L Galaxy Microelectronics
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BSS123G-3L Galaxy Microelectronics Small Signal Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123G-3L

This table gives cross-reference parts and alternative options found for BSS123G-3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123G-3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
Q62702-S512 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123G-3L vs Q62702-S512
BSS123/L99Z 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments BSS123G-3L vs BSS123/L99Z
BSS123LT3 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123G-3L vs BSS123LT3
BSS123-F169 N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL onsemi BSS123G-3L vs BSS123-F169
BSS123D87Z Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123G-3L vs BSS123D87Z
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA Motorola Semiconductor Products BSS123G-3L vs BSS123
Q67000-S245 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123G-3L vs Q67000-S245
BSS123L6327XT Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123G-3L vs BSS123L6327XT
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BSS123G-3L vs BSS123
BSS123TC 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Diodes Incorporated BSS123G-3L vs BSS123TC

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