Datasheets
BSS138NE6327 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS138NE6327 by Infineon Technologies AG

Overview of BSS138NE6327 by Infineon Technologies AG

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Price & Stock for BSS138NE6327

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 12 1062
  • 12 $0.4500
  • 35 $0.2250
  • 224 $0.1350
$0.1350 / $0.4500 Buy Now
Bristol Electronics   Min Qty: 12 4750
  • 12 $0.4500
  • 35 $0.2250
  • 224 $0.1350
  • 1,113 $0.0900
  • 3,890 $0.0675
$0.0675 / $0.4500 Buy Now

Part Details for BSS138NE6327

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BSS138NE6327 Part Data Attributes

BSS138NE6327 Infineon Technologies AG
Buy Now Datasheet
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BSS138NE6327 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.23 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.8 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified
Reference Standard MIL-STD-883
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for BSS138NE6327

This table gives cross-reference parts and alternative options found for BSS138NE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138NE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS138NH6327XTSA2 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NH6327XTSA2
BSS138NH6327 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NH6327
BSS138NL6433 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NL6433
BSS138N Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138N
BSS138NH6433 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NH6433
BSS138NL6327 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NL6327
BSS138NE6433 Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138NE6433
Part Number Description Manufacturer Compare
BSS138LT1G Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BSS138NE6327 vs BSS138LT1G
BSS138L Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, 3000-REEL onsemi BSS138NE6327 vs BSS138L
BSS138-13 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS138NE6327 vs BSS138-13
BSS138N Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS138NE6327 vs BSS138N
BSS138 Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Jiangsu Changjiang Electronics Technology Co Ltd BSS138NE6327 vs BSS138
BSS138 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Zetex / Diodes Inc BSS138NE6327 vs BSS138
BSS138T/R13 Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 PanJit Semiconductor BSS138NE6327 vs BSS138T/R13
BSS138-G N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V, 220mA, SOT-23 3L, 3000-REEL onsemi BSS138NE6327 vs BSS138-G
BSS138 Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS138NE6327 vs BSS138
BSS138TC 200mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Diodes Incorporated BSS138NE6327 vs BSS138TC

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