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Part Details for BSZ060NE2LSATMA1 by Infineon Technologies AG
Overview of BSZ060NE2LSATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ060NE2LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y1830
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Newark | Mosfet, N-Ch, 25V, 40A, Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Qualification:-Rohs Compliant: Yes |Infineon BSZ060NE2LSATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3950 / $0.8220 | Buy Now |
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DISTI #
86AK4588
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Newark | Mosfet, N-Ch, 25V, 40A, Tsdson Rohs Compliant: Yes |Infineon BSZ060NE2LSATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.2750 / $0.2890 | Buy Now |
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DISTI #
BSZ060NE2LSATMA1CT-ND
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DigiKey | MOSFET N-CH 25V 12A/40A TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
56303 In Stock |
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$0.2647 / $0.5600 | Buy Now |
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DISTI #
BSZ060NE2LSATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ060NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2471 / $0.2824 | Buy Now |
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DISTI #
726-BSZ060NE2LSATMA1
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Mouser Electronics | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS RoHS: Compliant | 70866 |
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$0.2580 / $0.5600 | Buy Now |
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Future Electronics | Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 10000Reel |
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$0.1490 / $0.1560 | Buy Now |
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Future Electronics | Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.2600 / $0.2700 | Buy Now |
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Bristol Electronics | 21 |
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RFQ | ||
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DISTI #
BSZ060NE2LSATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ060NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2471 / $0.2824 | Buy Now |
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Ameya Holding Limited | Min Qty: 1250 | 24900 |
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$0.7852 | Buy Now |
Part Details for BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 CAD Models
BSZ060NE2LSATMA1 Part Data Attributes
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BSZ060NE2LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ060NE2LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N3 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 16 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ060NE2LSATMA1
This table gives cross-reference parts and alternative options found for BSZ060NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ060NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSZ060NE2LS | Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ060NE2LSATMA1 vs BSZ060NE2LS |