Datasheets
BSZ42DN25NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ42DN25NS3GATMA1 by Infineon Technologies AG

Overview of BSZ42DN25NS3GATMA1 by Infineon Technologies AG

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Applications Automotive

Price & Stock for BSZ42DN25NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47Y8009
Newark Mosfet, N-Ch, 250V, 5A, Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Qualification:-Rohs Compliant: Yes |Infineon BSZ42DN25NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 80
  • 1 $0.1870
  • 10 $0.1870
  • 25 $0.1870
  • 50 $0.1870
  • 100 $0.1870
  • 250 $0.1870
  • 500 $0.1870
$0.1870 Buy Now
DISTI # 86AK4598
Newark Mosfet, N-Ch, 250V, 5A, Tsdson Rohs Compliant: Yes |Infineon BSZ42DN25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.5650
  • 10,000 $0.5510
$0.5510 / $0.5650 Buy Now
DISTI # BSZ42DN25NS3GATMA1CT-ND
DigiKey MOSFET N-CH 250V 5A TSDSON-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 17113
In Stock
  • 1 $1.7800
  • 10 $1.1340
  • 100 $0.7627
  • 500 $0.6034
  • 1,000 $0.5521
  • 2,000 $0.5089
  • 5,000 $0.4693
$0.4693 / $1.7800 Buy Now
DISTI # BSZ42DN25NS3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ42DN25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
RFQ
DISTI # BSZ42DN25NS3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ42DN25NS3GATMA1) RoHS: Compliant Min Qty: 666 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 10000 Partner Stock
  • 1 $0.5475
  • 25 $0.5365
  • 100 $0.5146
  • 500 $0.4927
  • 1,000 $0.4654
$0.4654 / $0.5475 Buy Now
DISTI # 47Y8009
Avnet Americas Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y8009) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 80 Partner Stock
  • 1 $1.4700
  • 10 $1.1200
  • 25 $1.0500
  • 50 $0.9810
  • 100 $0.9090
$0.9090 / $1.4700 Buy Now
DISTI # 726-BSZ42DN25NS3GATM
Mouser Electronics MOSFETs N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant 26504
  • 1 $1.3200
  • 10 $0.9370
  • 100 $0.6970
  • 500 $0.5840
  • 1,000 $0.5150
  • 5,000 $0.4690
$0.4690 / $1.3200 Buy Now
Future Electronics MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 5000
Reel
  • 5,000 $0.4600
$0.4600 Buy Now
Future Electronics MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 5,000 $0.4600
$0.4600 Buy Now
Rochester Electronics BSZ42DN25 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 10000
  • 1 $0.5475
  • 25 $0.5365
  • 100 $0.5146
  • 500 $0.4927
  • 1,000 $0.4654
$0.4654 / $0.5475 Buy Now
DISTI # BSZ42DN25NS3GATMA1
TME Transistor: N-MOSFET, unipolar, 250V, 5A, 33.8W, PG-TSDSON-8 Min Qty: 1 0
  • 1 $1.4070
  • 25 $1.0160
  • 50 $0.9150
  • 250 $0.7260
  • 500 $0.6590
  • 1,000 $0.6140
  • 5,000 $0.6030
$0.6030 / $1.4070 RFQ
DISTI # C1S322000233388
Chip1Stop Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R RoHS: Compliant Container: Cut Tape 12369
  • 1 $0.7600
  • 10 $0.6550
  • 50 $0.6520
  • 100 $0.5490
  • 200 $0.5180
  • 500 $0.5110
  • 1,000 $0.4890
  • 2,000 $0.4870
  • 5,000 $0.4350
$0.4350 / $0.7600 Buy Now
DISTI # SP000781796
EBV Elektronik Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R (Alt: SP000781796) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 250V 5A 33.8W 425m2.5A10V 4V13uA 1 N-Channel TSDSON-8 MOSFETs ROHS 86
  • 1 $0.7942
  • 10 $0.7738
  • 30 $0.7597
  • 100 $0.7472
$0.7472 / $0.7942 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $0.6571
  • 10,000 $0.6133
$0.6133 / $0.6571 Buy Now
Win Source Electronics MOSFET N-CH 250V 5A TSDSON-8 41749
  • 10 $5.0870
  • 24 $4.1740
  • 38 $4.0440
  • 52 $3.9130
  • 67 $3.7830
  • 89 $3.3920
$3.3920 / $5.0870 Buy Now

Part Details for BSZ42DN25NS3GATMA1

BSZ42DN25NS3GATMA1 CAD Models

BSZ42DN25NS3GATMA1 Part Data Attributes

BSZ42DN25NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ42DN25NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.425 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33.8 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSZ42DN25NS3GATMA1

This table gives cross-reference parts and alternative options found for BSZ42DN25NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ42DN25NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ42DN25NS3G Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BSZ42DN25NS3G
Part Number Description Manufacturer Compare
BUZ32HXKSA1 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ32HXKSA1
BUZ73AL Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BSZ42DN25NS3GATMA1 vs BUZ73AL
BUZ31H3045A Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ31H3045A
BUZ73H 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC BSZ42DN25NS3GATMA1 vs BUZ73H
BUZ32H3045A 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC BSZ42DN25NS3GATMA1 vs BUZ32H3045A
BUZ31H3046 Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ31H3046
BUZ73AL Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ73AL
BUZ73ALH Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ73ALH
BUZ73L Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ73L
BUZ73AHXKSA1 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BSZ42DN25NS3GATMA1 vs BUZ73AHXKSA1

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