-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
47Y8009
|
Newark | Mosfet, N-Ch, 250V, 5A, Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Qualification:-Rohs Compliant: Yes |Infineon BSZ42DN25NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 80 |
|
$0.1870 | Buy Now |
DISTI #
86AK4598
|
Newark | Mosfet, N-Ch, 250V, 5A, Tsdson Rohs Compliant: Yes |Infineon BSZ42DN25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.5510 / $0.5650 | Buy Now |
DISTI #
BSZ42DN25NS3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 250V 5A TSDSON-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17113 In Stock |
|
$0.4693 / $1.7800 | Buy Now |
DISTI #
BSZ42DN25NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ42DN25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
RFQ | |
DISTI #
BSZ42DN25NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ42DN25NS3GATMA1) RoHS: Compliant Min Qty: 666 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 10000 Partner Stock |
|
$0.4654 / $0.5475 | Buy Now |
DISTI #
47Y8009
|
Avnet Americas | Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y8009) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 80 Partner Stock |
|
$0.9090 / $1.4700 | Buy Now |
DISTI #
726-BSZ42DN25NS3GATM
|
Mouser Electronics | MOSFETs N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant | 26504 |
|
$0.4690 / $1.3200 | Buy Now |
|
Future Electronics | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
|
$0.4600 | Buy Now |
|
Future Electronics | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.4600 | Buy Now |
|
Rochester Electronics | BSZ42DN25 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 10000 |
|
$0.4654 / $0.5475 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
BSZ42DN25NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ42DN25NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PDSO-N5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 40 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.425 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 33.8 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSZ42DN25NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ42DN25NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSZ42DN25NS3G | Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ42DN25NS3GATMA1 vs BSZ42DN25NS3G |